Recent progress in three-terminal artificial synapses based on 2D materials: from mechanisms to applications

F Zhang, C Li, Z Li, L Dong, J Zhao - Microsystems & Nanoengineering, 2023 - nature.com
Synapses are essential for the transmission of neural signals. Synaptic plasticity allows for
changes in synaptic strength, enabling the brain to learn from experience. With the rapid …

High‐performance neuromorphic computing based on ferroelectric synapses with excellent conductance linearity and symmetry

ST Yang, XY Li, TL Yu, J Wang, H Fang… - Advanced Functional …, 2022 - Wiley Online Library
Artificial synapses can boost neuromorphic computing to overcome the inherent limitations
of von Neumann architecture. As a promising memristor candidate, ferroelectric tunnel …

Recent progress on two-dimensional neuromorphic devices and artificial neural network

C Tian, L Wei, Y Li, J Jiang - Current Applied Physics, 2021 - Elsevier
Mimicking biological synapses with microelectronic devices is widely considered as the first
step in hardware building artificial neuromorphic networks, which is also the basis of brain …

High-Performance Neuromorphic Computing and Logic Operation Based on a Self-Assembled Vertically Aligned Nanocomposite SrTiO3:MgO Film Memristor

Z Guo, G Liu, Y Sun, Y Zhang, J Zhao, P Liu, H Wang… - ACS …, 2023 - ACS Publications
Neuromorphic computing based on memristors capable of in-memory computing is
promising to break the energy and efficiency bottleneck of well-known von Neumann …

Multi-neuron connection using multi-terminal floating–gate memristor for unsupervised learning

UY Won, Q An Vu, SB Park, MH Park, V Dam Do… - Nature …, 2023 - nature.com
Multi-terminal memristor and memtransistor (MT-MEMs) has successfully performed
complex functions of heterosynaptic plasticity in synapse. However, theses MT-MEMs lack …

Giant Electroresistance in Ferroelectric Tunnel Junctions via High-Throughput Designs: Toward High-Performance Neuromorphic Computing

H Fang, J Wang, F Nie, N Zhang, T Yu… - … Applied Materials & …, 2023 - ACS Publications
Ferroelectric tunnel junctions (FTJs) have been regarded as one of the most promising
candidates for next-generation devices for data storage and neuromorphic computing owing …

Indium–Gallium–Zinc Oxide-Based Synaptic Charge Trap Flash for Spiking Neural Network-Restricted Boltzmann Machine

E Park, S Jang, G Noh, Y Jo, DK Lee, IS Kim… - Nano …, 2023 - ACS Publications
Recently, neuromorphic computing has been proposed to overcome the drawbacks of the
current von Neumann computing architecture. Especially, spiking neural network (SNN) has …

Implementation of synaptic device using ultraviolet ozone treated water‐in‐bisalt/polymer electrolyte‐gated transistor

H Lee, M Jin, HJ Na, C Im, JH Lee, J Kim… - Advanced Functional …, 2022 - Wiley Online Library
Electrolyte‐gated transistors (EGTs) have been extensively studied as a next‐generation
neuromorphic device mimicking the biological ionic flux in synapses. However, its long‐term …

Demonstration of Nonvolatile Storage and Synaptic Functions in All-Two-Dimensional Floating-Gate Transistors Based on MoS2 Channels

W Li, J Li, Y Chen, Z Chen, W Li, Z Wang… - ACS Applied …, 2023 - ACS Publications
With the advent of post-Moore era, the development of memory devices based on bulk
materials gradually entered the bottleneck period. Two-dimensional (2D) materials have …

Gas‐phase alkali metal‐assisted MOCVD growth of 2D transition metal dichalcogenides for large‐scale precise nucleation control

TS Kim, KP Dhakal, E Park, G Noh, HJ Chai, Y Kim… - Small, 2022 - Wiley Online Library
Advances in large‐area and high‐quality 2D transition metal dichalcogenides (TMDCs)
growth are essential for semiconductor applications. Here, the gas‐phase alkali metal …