[HTML][HTML] S2DS: Physics-based compact model for circuit simulation of two-dimensional semiconductor devices including non-idealities
SV Suryavanshi, E Pop - Journal of Applied Physics, 2016 - pubs.aip.org
We present a physics-based compact model for two-dimensional (2D) field-effect transistors
(FETs) based on monolayer semiconductors such as MoS 2. A semi-classical transport …
(FETs) based on monolayer semiconductors such as MoS 2. A semi-classical transport …
Optimizing u-shape FinFETs for sub-5nm technology: performance analysis and device-to-circuit evaluation in digital and analog/radio frequency applications
FinFET is considered as the potential contender in the era of Multigate FETs. This
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
manuscript for the first time presents the structural variations for Junctionless FinFET devices …
Bias dependence of total ionizing dose effects in SiGe-MOS FinFETs
The total ionizing dose (TID) response of double-gate SiGe-\rmSiO_2/\rmHfO_2\p MOS
FinFET devices is investigated under different device bias conditions. Negative bias …
FinFET devices is investigated under different device bias conditions. Negative bias …
Impact of SOI substrate on the radiation response of ultrathin transistors down to the 20 nm node
M Gaillardin, M Martinez, P Paillet… - … on Nuclear Science, 2013 - ieeexplore.ieee.org
In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-
OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate …
OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate …
Fully depletion of advanced silicon on insulator MOSFETs
MK Md Arshad, N Othman, U Hashim - Critical Reviews in Solid …, 2015 - Taylor & Francis
Scaling of the transistor has been tremendous successful in the beginning with reduction of
the gate oxide thickness and increase of doping concentration. Moving into smaller …
the gate oxide thickness and increase of doping concentration. Moving into smaller …
Strained FDSOI CMOS technology scalability down to 2.5nm film thickness and 18nm gate length with a TiN/HfO2 gate stack
V Barral, T Poiroux, F Andrieu… - 2007 IEEE …, 2007 - ieeexplore.ieee.org
Scalability of both unstrained and strained FDSOI CMOSFETs is explored for the first time
down to 2.5 nm film thickness and 18 nm gate length with HfO 2/TiN gate stack. Off-state …
down to 2.5 nm film thickness and 18 nm gate length with HfO 2/TiN gate stack. Off-state …
Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET
An analytic subthreshold potential model for gate underlap cylindrical gate-all-around (GAA)
MOSFETs is presented in this work. The fringing field from the gate to underlap regions is …
MOSFETs is presented in this work. The fringing field from the gate to underlap regions is …
Characteristics of GaN and AlGaN/GaN FinFETs
Abstract AlGaN/GaN FinFETs, with high quality atomic layer deposited (ALD) Al 2 O 3 gate
dielectric, have been fabricated. The devices have a two-dimensional electron gas (2DEG) …
dielectric, have been fabricated. The devices have a two-dimensional electron gas (2DEG) …
Supercoupling effect in short-channel ultrathin fully depleted silicon-on-insulator transistors
Supercoupling effect prevents the simultaneous formation of inversion and accumulation
channels at the two interfaces of ultrathin silicon-on-insulator metal-oxide-semiconductor …
channels at the two interfaces of ultrathin silicon-on-insulator metal-oxide-semiconductor …
Analytical unified threshold voltage model of short-channel FinFETs and implementation
N Fasarakis, A Tsormpatzoglou, DH Tassis… - Solid-state …, 2011 - Elsevier
In this work, an analytical compact model for the threshold voltage Vt of double-gate (DG)
and tri-gate (TG) FinFETs is proposed. The DG FinFET Vt model is extended to TG FinFET Vt …
and tri-gate (TG) FinFETs is proposed. The DG FinFET Vt model is extended to TG FinFET Vt …