III-nitrides are intriguing materials with the potential to be used in various interdisciplinary
applications, including high-power optoelectronics, energy conversion, green technologies …

A large number of oxides has been investigated in the last twenty years as possible new
materials for various applications ranging from opto-electronics to heterogeneous catalysis …

Density-functional theory calculations of the LiNbO 3 (2 1¯ 1¯ 0),(1 1¯ 00), and (0001)
surfaces, commonly referred to as X, Y, and Z cuts, are presented. In case of the Z cut, we …

To fabricate AlGaN/gallium nitride (GaN) enhancement-mode metal-oxide-semiconductor
high-electron mobility transistors (E-MOSHEMTs), the gate-recessed structure and the …

High responsivity ultraviolet (UV) photodetectors (PDs) are essential for abundant civilian
and military applications. Gallium nitride (GaN) has emerged as an ideal material for UV PD …

Abstract The polar (0 0 0 1) surface of stoichiometric LiNbO 3 undergoes a series of
structural transformations with temperature. This complex behavior mirrors the action of …

The effect of ferroelectric poling on the adsorption characteristics of water at lithium niobate
surfaces is investigated by ab initio calculations. Thereby we model the adsorption of H 2 O …

Atomic resolution images of the polar (000 1¯) surface of lithium niobate (LiNbO 3) are
achieved by frequency modulation atomic force microscopy operated at the solid-water …

The microscopic structure of the polar (000 1¯) and (0001) surfaces of lithium niobate is
investigated by atomic-resolution frequency modulation atomic force microscopy and first …

X-ray photoelectron spectroscopy has been used to measure the valence band offset of the
InN/BaTiO 3 heterojunction. It is found that a type-I band alignment forms at the interface …