Atomic-scale choreography of vapor–liquid–solid nanowire growth

M Ek, MA Filler - Accounts of Chemical Research, 2018 - ACS Publications
Conspectus Functional materials and devices require nanoscale control of morphology,
crystal structure, and composition. Vapor–liquid–solid (VLS) crystal growth and its related …

Geometric nanophotonics: Light management in single nanowires through morphology

S Kim, JF Cahoon - Accounts of chemical research, 2019 - ACS Publications
Conspectus Comprehensive control of light–matter interactions at the nanoscale is
increasingly important for the development of miniaturized light-based technologies that …

Designing morphology in epitaxial silicon nanowires: the role of gold, surface chemistry, and phosphorus doping

S Kim, DJ Hill, CW Pinion, JD Christesen, JR McBride… - Acs Nano, 2017 - ACS Publications
Vertically aligned semiconductor nanowires (NWs) have many potential applications for NW-
based technologies, ranging from solar cells to intracellular sensors. Aligned NWs can be …

Identifying crystallization-and incorporation-limited regimes during vapor–liquid–solid growth of Si nanowires

CW Pinion, DP Nenon, JD Christesen, JF Cahoon - Acs Nano, 2014 - ACS Publications
The vapor–liquid–solid (VLS) mechanism is widely used for the synthesis of semiconductor
nanowires (NWs), yet several aspects of the mechanism are not fully understood. Here, we …

Chemically engraving semiconductor nanowires: Using three-dimensional nanoscale morphology to encode functionality from the bottom up

JD Christesen, CW Pinion, DJ Hill, S Kim… - The journal of …, 2016 - ACS Publications
The patterning of semiconductors with nanometer-scale precision is a cornerstone of
modern technology. Top-down methods, ranging from photolithography to focused-ion beam …

Encoding highly nonequilibrium boron concentrations and abrupt morphology in p-type/n-type silicon nanowire superlattices

DJ Hill, TS Teitsworth, S Kim… - … applied materials & …, 2017 - ACS Publications
Although silicon (Si) nanowires (NWs) grown by a vapor–liquid–solid (VLS) mechanism
have been demonstrated for a range of photonic, electronic, and solar-energy applications …

Roughening transition as a driving factor in the formation of self-ordered one-dimensional nanostructures

VN Gorshkov, VV Tereshchuk, P Sareh - CrystEngComm, 2021 - pubs.rsc.org
Based on the kinetic Monte Carlo method, we investigated the formation mechanisms of
periodical modulations arising along the length of one-dimensional structures. The evolution …

Solid–Liquid–Vapor Etching of Semiconductor Nanowires

HY Hui, MA Filler - Nano Letters, 2015 - ACS Publications
The vapor–liquid–solid (VLS) mechanism enables the bottom-up, or additive, growth of
semiconductor nanowires. Here, we demonstrate a reverse process, whereby catalyst atoms …

Contactless electrical and structural characterization of semiconductor nanowires with axially modulated doping profiles

W Yuan, G Tutuncuoglu, A Mohabir, L Liu, LC Feldman… - Small, 2019 - Wiley Online Library
Efficient characterization of semiconductor nanowires having complex dopant profiles or
heterostructures is critical to fully understand these materials and the devices built from …

Programming Semiconductor Nanowire Composition with Sub-100 nm Resolution via the Geode Process

M Mujica, A Mohabir, PP Shetty, WR Cline, D Aziz… - Nano Letters, 2022 - ACS Publications
We demonstrate the vapor–liquid–solid growth of single-crystalline i-Si, i-Si/n-Si, and Si x
Ge1–x/Si y Ge1–y nanowires via the Geode process. By enabling nanowire growth on the …