Carrier-induced defect saturation in green InGaN LEDs: A potential phenomenon to enhance efficiency at higher wavelength regime
Non-radiative defects play a deterministic role in regulating the performance of LEDs. Yet,
defect saturation in LEDs is relatively unexplored in the literature. Here, we establish the …
defect saturation in LEDs is relatively unexplored in the literature. Here, we establish the …
Reduced auger coefficient through efficient carrier capture and improved radiative efficiency from the broadband optical cavity: a mechanism for potential droop …
Efficiency droop at high carrier-injection regimes is a matter of concern in InGaN/GaN
quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as …
quantum-confined heterostructure-based light-emitting diodes (LEDs). Processes such as …
Investigation of Ultrafast Carrier Dynamics in InGaN/GaN‐Based Nanostructures Using Femtosecond Pump–Probe Absorption Spectroscopy
GaN‐based optoelectronic devices including light‐emitting diodes and lasers realized with
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …
quantum‐confined nanostructures, revolutionized the solid‐state lighting. Excited‐state …
Gradual Carrier Filling Effect in “Green” InGaN/GaN Quantum Dots: Femtosecond Carrier Kinetics with Sequential Two-Photon Absorption
Quantum dots (QDs) allow for a significant amount of strain relaxation, which is helpful in
GaN systems where a large lattice mismatch needs to be accommodated. InGaN QDs with a …
GaN systems where a large lattice mismatch needs to be accommodated. InGaN QDs with a …
Real-time observation of delayed excited-state dynamics in InGaN/GaN quantum-wells by femtosecond transient absorption spectroscopy
This work employs femtosecond transient absorption spectroscopy to investigate the
ultrafast carrier dynamics of bound states in In 0.14 Ga 0.86 N/GaN quantum wells. The …
ultrafast carrier dynamics of bound states in In 0.14 Ga 0.86 N/GaN quantum wells. The …
Investigating defects in InGaN based optoelectronics: from material and device perspective
III-nitride optoelectronics have revolutionized solid-state lighting technology. However, non-
radiative defects play a major bottleneck in determining the performance of InGaN-based …
radiative defects play a major bottleneck in determining the performance of InGaN-based …