[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials

W Zhang, E Ma - Materials Today, 2020 - Elsevier
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …

Recent advances in doped Ge 2 Sb 2 Te 5 thin film based phase change memories

N Bala, B Khan, K Singh, P Singh, AP Singh… - Materials …, 2023 - pubs.rsc.org
Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves
superior in the category of memory devices due to a combination of their unique set of …

Chalcogenide phase change material for active terahertz photonics

P Pitchappa, A Kumar, S Prakash, H Jani… - Advanced …, 2019 - Wiley Online Library
The strikingly contrasting optical properties of various phases of chalcogenide phase
change materials (PCM) has recently led to the development of novel photonic devices such …

Volatile ultrafast switching at multilevel nonvolatile states of phase change material for active flexible terahertz metadevices

P Pitchappa, A Kumar, S Prakash… - Advanced Functional …, 2021 - Wiley Online Library
Phase change materials provide unique reconfigurable properties for photonic applications
that mainly arise from their exotic characteristic to reversibly switch between the amorphous …

Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications

Y Xu, X Wang, W Zhang, L Schäfer, J Reindl… - Advanced …, 2021 - Wiley Online Library
Tailoring the degree of disorder in chalcogenide phase‐change materials (PCMs) plays an
essential role in nonvolatile memory devices and neuro‐inspired computing. Upon rapid …

A review on disorder-driven metal–insulator transition in crystalline vacancy-rich GeSbTe phase-change materials

JJ Wang, YZ Xu, R Mazzarello, M Wuttig, W Zhang - Materials, 2017 - mdpi.com
Metal–insulator transition (MIT) is one of the most essential topics in condensed matter
physics and materials science. The accompanied drastic change in electrical resistance can …

Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials

B Liu, K Li, J Zhou, Z Sun - Advanced Functional Materials, 2024 - Wiley Online Library
Phase‐change random access memory (PCRAM) is one of the most technologically mature
candidates for next‐generation non‐volatile memory and is currently at the forefront of …

Diffusion-assisted displacive transformation in Yttrium-doped Sb2Te3 phase change materials

K Li, B Liu, J Zhou, SR Elliott, Z Sun - Acta Materialia, 2023 - Elsevier
Phase transformations between cubic and rhombohedral states of phase-change
chalcogenide materials have been considered to result in small resistance drift, fast …

Ultrafast interfacial transformation from 2D-to 3D-bonded structures in layered Ge–Sb–Te thin films and heterostructures

M Behrens, A Lotnyk, JW Gerlach, I Hilmi, T Abel… - Nanoscale, 2018 - pubs.rsc.org
Two-dimensional van-der-Waals-bonded chalcogenide heterostructures have recently
received a lot of attention due to promising applications in the fields of photonics …

Tellurium self-diffusion in amorphous Ge2Sb2Te5 phase change materials

Q Gong, H Jiang, J Perrin-Toinin, M Peterlechner… - Acta Materialia, 2023 - Elsevier
Abstract Amorphous Ge 2 Sb 2 Te 5 phase change material is considered as a prototype
material for non-volatile memories due to the reversibility of the amorphous-to-crystalline …