[HTML][HTML] Unveiling the structural origin to control resistance drift in phase-change memory materials
The global demand for data storage and processing is increasing exponentially. To deal
with this challenge, massive efforts have been devoted to the development of advanced …
with this challenge, massive efforts have been devoted to the development of advanced …
Recent advances in doped Ge 2 Sb 2 Te 5 thin film based phase change memories
Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves
superior in the category of memory devices due to a combination of their unique set of …
superior in the category of memory devices due to a combination of their unique set of …
Chalcogenide phase change material for active terahertz photonics
The strikingly contrasting optical properties of various phases of chalcogenide phase
change materials (PCM) has recently led to the development of novel photonic devices such …
change materials (PCM) has recently led to the development of novel photonic devices such …
Volatile ultrafast switching at multilevel nonvolatile states of phase change material for active flexible terahertz metadevices
Phase change materials provide unique reconfigurable properties for photonic applications
that mainly arise from their exotic characteristic to reversibly switch between the amorphous …
that mainly arise from their exotic characteristic to reversibly switch between the amorphous …
Materials Screening for Disorder‐Controlled Chalcogenide Crystals for Phase‐Change Memory Applications
Tailoring the degree of disorder in chalcogenide phase‐change materials (PCMs) plays an
essential role in nonvolatile memory devices and neuro‐inspired computing. Upon rapid …
essential role in nonvolatile memory devices and neuro‐inspired computing. Upon rapid …
A review on disorder-driven metal–insulator transition in crystalline vacancy-rich GeSbTe phase-change materials
Metal–insulator transition (MIT) is one of the most essential topics in condensed matter
physics and materials science. The accompanied drastic change in electrical resistance can …
physics and materials science. The accompanied drastic change in electrical resistance can …
Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials
B Liu, K Li, J Zhou, Z Sun - Advanced Functional Materials, 2024 - Wiley Online Library
Phase‐change random access memory (PCRAM) is one of the most technologically mature
candidates for next‐generation non‐volatile memory and is currently at the forefront of …
candidates for next‐generation non‐volatile memory and is currently at the forefront of …
Diffusion-assisted displacive transformation in Yttrium-doped Sb2Te3 phase change materials
K Li, B Liu, J Zhou, SR Elliott, Z Sun - Acta Materialia, 2023 - Elsevier
Phase transformations between cubic and rhombohedral states of phase-change
chalcogenide materials have been considered to result in small resistance drift, fast …
chalcogenide materials have been considered to result in small resistance drift, fast …
Ultrafast interfacial transformation from 2D-to 3D-bonded structures in layered Ge–Sb–Te thin films and heterostructures
Two-dimensional van-der-Waals-bonded chalcogenide heterostructures have recently
received a lot of attention due to promising applications in the fields of photonics …
received a lot of attention due to promising applications in the fields of photonics …
Tellurium self-diffusion in amorphous Ge2Sb2Te5 phase change materials
Q Gong, H Jiang, J Perrin-Toinin, M Peterlechner… - Acta Materialia, 2023 - Elsevier
Abstract Amorphous Ge 2 Sb 2 Te 5 phase change material is considered as a prototype
material for non-volatile memories due to the reversibility of the amorphous-to-crystalline …
material for non-volatile memories due to the reversibility of the amorphous-to-crystalline …