Technology roadmap for flexible sensors

Y Luo, MR Abidian, JH Ahn, D Akinwande… - ACS …, 2023 - ACS Publications
Humans rely increasingly on sensors to address grand challenges and to improve quality of
life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are …

Critical challenges in the development of electronics based on two-dimensional transition metal dichalcogenides

Y Wang, S Sarkar, H Yan, M Chhowalla - Nature Electronics, 2024 - nature.com
The development of high-performance electronic devices based on two-dimensional (2D)
transition metal dichalcogenide semiconductors has recently advanced from one-off proof-of …

Stack growth of wafer-scale van der Waals superconductor heterostructures

Z Zhou, F Hou, X Huang, G Wang, Z Fu, W Liu, G Yuan… - Nature, 2023 - nature.com
Abstract Two-dimensional (2D) van der Waals (vdW) heterostructures have attracted
considerable attention in recent years,,,–. The most widely used method of fabrication is to …

Layer-structured anisotropic metal chalcogenides: recent advances in synthesis, modulation, and applications

A Giri, G Park, U Jeong - Chemical Reviews, 2023 - ACS Publications
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D
and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next …

Synthesis, Modulation, and Application of Two-Dimensional TMD Heterostructures

R Wu, H Zhang, H Ma, B Zhao, W Li, Y Chen… - Chemical …, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

Van der Waals‐Interface‐Dominated All‐2D Electronics

X Zhang, Y Zhang, H Yu, H Zhao, Z Cao… - Advanced …, 2023 - Wiley Online Library
The interface is the device. As the feature size rapidly shrinks, silicon‐based electronic
devices are facing multiple challenges of material performance decrease and interface …

Field-free switching of perpendicular magnetization by two-dimensional PtTe2/WTe2 van der Waals heterostructures with high spin Hall conductivity

F Wang, G Shi, KW Kim, HJ Park, JG Jang, HR Tan… - Nature materials, 2024 - nature.com
The key challenge of spin–orbit torque applications lies in exploring an excellent spin
source capable of generating out-of-plane spins while exhibiting high spin Hall conductivity …

Voltage control of magnetism in Fe3-xGeTe2/In2Se3 van der Waals ferromagnetic/ferroelectric heterostructures

J Eom, IH Lee, JY Kee, M Cho, J Seo, H Suh… - Nature …, 2023 - nature.com
We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure
device consisting of two distinct vdW materials, the ferromagnetic Fe3-x GeTe2 and the …

Large room-temperature magnetoresistance in van der Waals ferromagnet/semiconductor junctions

W Zhu, S Xie, H Lin, G Zhang, H Wu, T Hu… - Chinese Physics …, 2022 - iopscience.iop.org
A magnetic tunnel junction (MTJ) is the core component in memory technologies, such as
the magnetic random-access memory, magnetic sensors and programmable logic devices …

Reconfigurable multifunctional van der Waals ferroelectric devices and logic circuits

A Ram, K Maity, C Marchand, A Mahmoudi… - ACS …, 2023 - ACS Publications
Emerging reconfigurable devices are fast gaining popularity in the search for next-
generation computing hardware, while ferroelectric engineering of the doping state in …