InGaN quantum wells (QWs) grown on c‐plane sapphire substrate experience strain due to
the lattice mismatch. The strain generates a strong piezoelectric field in QWs that contributes …

This paper explores the optical limiting (OL) characteristics of an input probe field within a
closed-loop asymmetric coupled quantum well (ACQW) system. Our research reveals that …

In the present work, we explored the impact of doping concentration and applied electric
field on both linear and nonlinear optical properties based upon the intersubband transitions …

We analyze the asymmetric delta-doping dependence of nonlinear electron mobility μ of
GaAs| In x Ga 1–x As double quantum-well pseudo-morphic modulation doped field-effect …

Coherent-control protocols are introduced to selectively transport electrons, excitons, or pure
two-particle correlations through semiconductor interfaces. The scheme is tested in a double …

We study the low temperature multisubband electron mobility in a structurally asymmetric
GaAs/Al x Ga 1-x As delta doped double quantum well. We calculate the subband energy …

We study the effect of coupling of subband wave functions on the multisubband electron
mobility in a barrier delta doped GaAs/Al x Ga 1− x As asymmetric double quantum well …

The coherent Hall effect denotes the transient Hall response of impulsively excited coherent
charge-carrier wave packets in a solid. We report the first experimental study of this …

Optical absorption is calculated for asymmetric double quantum wells in intense terahertz
(THz) fields applied parallel to the growth direction z. Owing to the lack of inversion …

A study was conducted on potential fluctuations using the photoluminescence (PL)
technique with temperature and excitation intensity variations, in a sample containing In Ga …