This paper reviews recent development on compact modeling of multiple-gate (MG)
MOSFETs. Long-channel core models based on the analytical potential solutions of Poisson …

In this paper, we model the electrical properties of the junctionless (JL) nanowire field-effect
transistor (FET), which has been recently proposed as a possible alternative to the junction …

This is the first book dedicated to the next generation of MOSFET models. Addressed to
circuit designers with an in-depth treatment that appeals to device specialists, the book …

In this review, authors have retrospect the state-of-art dimension scaling and emerging other
non-conventional MOSFET structures particularly, the Double-Gate (DG) MOSFET and …

In 2008, Salahuddin and Datta proposed that a ferroelectric material operating in the
negative capacitance (NC) region could act as a step-up converter of the surface potential in …

Explicit continuous models for both double-gate (DG) and surrounding-gate (SG) MOSFETs
are presented. These models evolve from previous DG and SG MOSFETs models, which …

Analytical physically based models for the threshold voltage, subthreshold swing, and drain-
induced barrier lowering (DIBL) of undoped cylindrical gate-all-around MOSFETs have been …

Omega-shaped-gate (OSG) nanowire-based field effect transistors (FETs) have attracted a
great deal of attention recently, because theoretical simulations predicted that they should …

With the exact solution of the 2-D Poisson's equation in cylindrical coordinates, analytical
subthreshold behavior models for junctionless cylindrical surrounding-gate (JLCSG) …

Compact-modeling principles and solutions for nanoscale double-gate and gate-all-around
MOSFETs are explained. The main challenges of compact modeling for these devices are …