Memristor modeling: challenges in theories, simulations, and device variability

L Gao, Q Ren, J Sun, ST Han, Y Zhou - Journal of Materials Chemistry …, 2021 - pubs.rsc.org
This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …

Recommended methods to study resistive switching devices

M Lanza, HSP Wong, E Pop, D Ielmini… - Advanced Electronic …, 2019 - Wiley Online Library
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …

Variability in resistive memories

JB Roldán, E Miranda, D Maldonado… - Advanced Intelligent …, 2023 - Wiley Online Library
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …

Resistive switching memories based on metal oxides: mechanisms, reliability and scaling

D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …

Understanding memristive switching via in situ characterization and device modeling

W Sun, B Gao, M Chi, Q Xia, JJ Yang, H Qian… - Nature …, 2019 - nature.com
Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …

Nanoionic memristive phenomena in metal oxides: the valence change mechanism

R Dittmann, S Menzel, R Waser - Advances in Physics, 2021 - Taylor & Francis
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor

T Wei, Y Lu, F Zhang, J Tang, B Gao, P Yu… - Advanced …, 2023 - Wiley Online Library
HfOx‐based memristor has been studied extensively as one of the most promising
memories for the excellent nonvolatile data storage and computing‐in‐memory capabilities …

In-memory learning with analog resistive switching memory: A review and perspective

Y Xi, B Gao, J Tang, A Chen, MF Chang… - Proceedings of the …, 2020 - ieeexplore.ieee.org
In this article, we review the existing analog resistive switching memory (RSM) devices and
their hardware technologies for in-memory learning, as well as their challenges and …

Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics

M Materano, PD Lomenzo, A Kersch… - Inorganic Chemistry …, 2021 - pubs.rsc.org
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …

Advances in emerging memory technologies: From data storage to artificial intelligence

G Molas, E Nowak - Applied Sciences, 2021 - mdpi.com
This paper presents an overview of emerging memory technologies. It begins with the
presentation of stand-alone and embedded memory technology evolution, since the …