Memristor modeling: challenges in theories, simulations, and device variability
This article presents a review of the current development and challenges in memristor
modeling. We review the mechanisms of memristive devices based on various …
modeling. We review the mechanisms of memristive devices based on various …
Recommended methods to study resistive switching devices
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
Variability in resistive memories
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
D Ielmini - Semiconductor Science and Technology, 2016 - iopscience.iop.org
With the explosive growth of digital data in the era of the Internet of Things (IoT), fast and
scalable memory technologies are being researched for data storage and data-driven …
scalable memory technologies are being researched for data storage and data-driven …
Understanding memristive switching via in situ characterization and device modeling
Owing to their attractive application potentials in both non-volatile memory and
unconventional computing, memristive devices have drawn substantial research attention in …
unconventional computing, memristive devices have drawn substantial research attention in …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Three‐Dimensional Reconstruction of Conductive Filaments in HfOx‐Based Memristor
HfOx‐based memristor has been studied extensively as one of the most promising
memories for the excellent nonvolatile data storage and computing‐in‐memory capabilities …
memories for the excellent nonvolatile data storage and computing‐in‐memory capabilities …
In-memory learning with analog resistive switching memory: A review and perspective
In this article, we review the existing analog resistive switching memory (RSM) devices and
their hardware technologies for in-memory learning, as well as their challenges and …
their hardware technologies for in-memory learning, as well as their challenges and …
Interplay between oxygen defects and dopants: effect on structure and performance of HfO 2-based ferroelectrics
M Materano, PD Lomenzo, A Kersch… - Inorganic Chemistry …, 2021 - pubs.rsc.org
Ten years after the first report on ferroelectricity in HfO2, researchers are still occupied
unraveling the different causes behind this phenomenon. Among them, oxygen related …
unraveling the different causes behind this phenomenon. Among them, oxygen related …
Advances in emerging memory technologies: From data storage to artificial intelligence
G Molas, E Nowak - Applied Sciences, 2021 - mdpi.com
This paper presents an overview of emerging memory technologies. It begins with the
presentation of stand-alone and embedded memory technology evolution, since the …
presentation of stand-alone and embedded memory technology evolution, since the …