Methods and apparatus for providing circadian-friendly LED light sources are disclosed. A
light source is formed to include a first LED emission (eg, one or more LEDs emitting a first …

A method for fabricating a potential barrier for a nitrogen-face (N-face) nitride-based
electronic device, comprising using a thickness and polarization induced electric field of a III …

US9761763B2 - Dense-luminescent-materials-coated violet LEDs - Google Patents
US9761763B2 - Dense-luminescent-materials-coated violet LEDs - Google Patents Dense-luminescent-materials-coated …

5,132,981 A 7, 1992 Uomi et al. 5,253,264 A 10, 1993 Suzuki et al. 5,287,377 A 2, 1994
Fukuzawa et al. 5,392,306 A 2f1995 Usami et al. 5,471.335 A 11, 1995 Nitta 5,625,635 A …

High-performance light-emitting diode together with apparatus and method embodiments
thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to …

Semiconductor structures involving multiple quantum wells provide increased efficiency of
UV and visible light emitting diodes (LEDs) and other emitter devices, particularly at high …

(57) ABSTRACT A tight emitting device comprises at least one p-type layer and at least one
n-type layer and a microlens array Surface. A method for improving light efficiency of a light …

A gallium nitride-based device has a first GaN layer and a type II quantum well active region
over the GaN layer. The type II quantum well active region comprises at least one InGaN …

A light emitting diode device has a bulk gallium and nitrogen containing substrate with an
active region. The device has a lateral dimension and a thick vertical dimension such that …

A light emitting device comprising a staggered composition quantum well (QW) has a step-
function-like profile in the QW, which provides higher radiative efficiency and optical gain by …