Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust...

Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN pin Diodes with Avalanche Capability

JS Lundh, AG Jacobs, P Pandey… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Vertical gallium nitride (GaN) pin diodes with a planar hybrid edge termination (HET)
experimentally demonstrate avalanche capability. The HET consists of a nitrogen ion …
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