Recent development in 2D materials beyond graphene
Discovery of graphene and its astonishing properties have given birth to a new class of
materials known as “2D materials”. Motivated by the success of graphene, alternative …
materials known as “2D materials”. Motivated by the success of graphene, alternative …
[HTML][HTML] Bending induced electrical response variations in ultra-thin flexible chips and device modeling
Electronics that conform to 3D surfaces are attracting wider attention from both academia
and industry. The research in the field has, thus far, focused primarily on showcasing the …
and industry. The research in the field has, thus far, focused primarily on showcasing the …
Evolution of type-II hetero-strain cylindrical-gate-all-around nanowire FET for exploration and analysis of enriched performances
The incubation of strained nano-system in the form of tri-layered structure as nanowire
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
channel in the cylindrical-gate-all-around (CGAA) FET at 10 nm gate length is developed for …
[图书][B] Intelligent nanomaterials
Overall, this book presents a detailed and comprehensive overview of the state-of-the-art
development of different nanoscale intelligent materials for advanced applications. Apart …
development of different nanoscale intelligent materials for advanced applications. Apart …
Tuning the electro-optical properties of germanium nanowires by tensile strain
J Greil, A Lugstein, C Zeiner, G Strasser… - Nano …, 2012 - ACS Publications
In this Letter we present the electrical and electro-optical characterization of single
crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements …
crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements …
Ultra‐thin ISFET‐based sensing systems
M Shojaei Baghini, A Vilouras… - Electrochemical …, 2022 - Wiley Online Library
The ion‐sensitive field effect transistors (ISFETs), proposed little over 50 years ago, today
make the most promising devices for lab‐on‐a‐chip, implantable, and point‐of‐care (POC) …
make the most promising devices for lab‐on‐a‐chip, implantable, and point‐of‐care (POC) …
New strategies for producing defect free SiGe strained nanolayers
Strain engineering is seen as a cost-effective way to improve the properties of electronic
devices. However, this technique is limited by the development of the Asarro Tiller Grinfeld …
devices. However, this technique is limited by the development of the Asarro Tiller Grinfeld …
Defect evolution and dopant activation in laser annealed Si and Ge
Defect evolution and dopant activation are intimately related to the use of ion implantation
and annealing, traditionally used to dope semiconductors during device fabrication. Ultra …
and annealing, traditionally used to dope semiconductors during device fabrication. Ultra …
Comparative performance study of difference differential amplifier using 7 nm and 14 nm FinFET technologies and carbon nanotube FET
Difference differential amplifiers (DDA), which were built on FinFET and carbon nanotube
FET (CNTFET), are frequently used for signal processing owing to their advantages of low …
FET (CNTFET), are frequently used for signal processing owing to their advantages of low …
CNTFET based class AB current conveyor II: Design, analysis and waveform generator applications
In this work, we design and simulate a new class AB second generation current conveyor
(CCII) employing 32 nm technology node carbon nanotube field effect transistors (CNTFET) …
(CCII) employing 32 nm technology node carbon nanotube field effect transistors (CNTFET) …