Epitaxial lattice-matched AlScN/GaN distributed Bragg reflectors
We demonstrate epitaxial lattice-matched Al 0.89 Sc 0.11 N/GaN 10 and 20 period
distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma …
distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma …
Pulsed E-/D-mode switchable GaN HEMTs with a ferroelectric AlScN gate dielectric
In this study, we demonstrate ferroelectric GaN high-electron mobility transistors (HEMTs)
with a sputtered AlScN gate dielectric, exhibiting a large memory window of~ 14.6 V and a …
with a sputtered AlScN gate dielectric, exhibiting a large memory window of~ 14.6 V and a …
Performance characterization of Ferroelectric GaN HEMT based biosensor
In this manuscript detection of biomolecules has been performed using both the dielectric
modulation method as well as gate work function engineering technique for the proposed …
modulation method as well as gate work function engineering technique for the proposed …
Ferroelectric AlBN films by molecular beam epitaxy
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently
developed epitaxial nitride metal electrode, Nb 2 N. While a control AlN thin film exhibits …
developed epitaxial nitride metal electrode, Nb 2 N. While a control AlN thin film exhibits …
Theoretical limits of the matching bandwidth and output power of AlScN-based hemts
In this work, the simultaneously achievable matching bandwidth and output power of AlScN-
based high electron mobility transistors (HEMTs) are derived and compared to conventional …
based high electron mobility transistors (HEMTs) are derived and compared to conventional …
Nanoscale Engineering of Wurtzite Ferroelectrics: Unveiling Phase Transition and Ferroelectric Switching in ScAlN Nanowires
The pursuit of extreme device miniaturization and the exploration of associated physical
phenomena has spurred significant interest in crystallographic phase control and …
phenomena has spurred significant interest in crystallographic phase control and …
E-mode AlGaN/GaN HEMT with ScAlN/ScN charge trap-coupled ferroelectric gate stacks
A fully epitaxial ferroelectric ScAlN/AlGaN/GaN HEMT coupled with an ultrathin ScN charge
trap layer for enhancement-mode operation is demonstrated. The ultrathin ScN acts as an …
trap layer for enhancement-mode operation is demonstrated. The ultrathin ScN acts as an …
Effect of temperature on the performance of ScAlN/GaN high-electron mobility transistor
We have studied the operation of the ScAlN/GaN high-electron mobility transistor (HEMT) at
high temperatures up to 700 K (423 C). A maximum drain current density of∼ 2 A/mm and …
high temperatures up to 700 K (423 C). A maximum drain current density of∼ 2 A/mm and …
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality
This paper presents an overview of the promising physical properties of the aluminum
scandium nitride (AlScN) ternary alloy system and its integration in radiofrequency …
scandium nitride (AlScN) ternary alloy system and its integration in radiofrequency …
A novel reconfigurable RF switch based on ferroelectric hafnium oxide FeFET fabricated in 22 nm FDSOI technology
S Abdulazhanov, DK Huynh, QH Le… - 2023 18th European …, 2023 - ieeexplore.ieee.org
This paper presents a novel type of ferroelectric field effect transistor (FeFET)-based RF
switch with multiple finger structure fabricated in 22~nm FDSOI technology. The ability to …
switch with multiple finger structure fabricated in 22~nm FDSOI technology. The ability to …