In recent times, the demand for electrical energy is increased to such an extent that the
scientific research has to be focused on the development of materials that fulfil the growing …

We present a detailed theoretical analysis of the electronic and optical properties of c-plane
In Ga N/Ga N quantum-well structures with In contents ranging from 5% to 25%. Special …

Fourier transform spectroscopy is used to determine/control the degree of spectral diffusion
in high-quality site-controlled GaN nanowire quantum dots. Detailed analysis, including the …

The eight-band k· p formalism has been successfully applied to compute the electronic
properties of a wide range of semiconductor nanostructures in the past and can be …

We develop a 16-band k· p model for the description of wurtzite GaAs, together with a
scheme to determine electronic structure parameters for multiband k· p models. Our …

The k⋅ p method is significant in condensed matter physics for the compact and analytical
Hamiltonian. In the presence of magnetic field, it is described by the effective Zeeman's …

We study the luminescence of unintentionally doped and Si-doped In x Ga1–x N nanowires
with a low In content (x< 0.2) grown by molecular beam epitaxy on Si substrates. The …

Metal organic vapor-phase epitaxy of GaN shells on N-and Ga-polar nanowires on AlN/Si
(111) templates has been studied in detail. A polarity-dependent epitaxial optimization of …

Optoelectronic devices are now ubiquitous in our daily lives, from light emitting diodes
(LEDs) in many household appliances to solar cells for energy. This handbook shows how …

We present an atomistic theoretical analysis of the electronic and excitonic properties of
ultrathin, monolayer thick wurtzite (In, Ga) N embedded in GaN. Our microscopic …