Group-III-nitride semiconductors have shown enormous potential as light sources for full-
colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue-and green …

The nonradiative lifetime (τ NR) of the near-band-edge emission in various quality GaN
samples is compared with the results of positron annihilation measurement, in order to …

White light‐emitting diode (LED) luminous efficacy must improve significantly if LEDs are to
become useful for general lighting. Phosphors commonly used in white LEDs backscatter …

Luminescence dynamics for the near-band-edge (NBE) emission peak at around 250 nm of
c-plane Si-doped Al 0.6 Ga 0.4 N films grown on AlN templates by low-pressure …

Si is the n-type dopant of choice for GaN and β-Ga2O3. However, in (Al, Ga) N and β-(Al,
Ga) 2O3 alloys, when the Al content is increased, the n-type conductivity produced by the …

Magnesium aluminate spinel, MgAl 2 O 4, is a structurally and compositionally interesting
crystal since it can exhibit significant deviations from the stoichiometric composition because …

The impact of AlGaN growth conditions on AlGaN: Si resistivity and surface morphology has
been investigated using metalorganic chemical vapor deposition. Growth parameters …

This book addresses material growth, device fabrication, device application, and
commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and …

We review a selection of recent research work on III‐nitride materials, limiting the scope to
bulk properties and quantum well structures. The different stages of development of the …

Vacancy-type defects in AlN grown by metal-organic vapor phase epitaxy (MOVPE) and
lateral epitaxial overgrowth (LEO) using halide vapor phase epitaxy were probed by a …