Neuromorphic Computing, a concept pioneered in the late 1980s, is receiving a lot of
attention lately due to its promise of reducing the computational energy, latency, as well as …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

The resistance switching behaviour of several materials has recently attracted considerable
attention for its application in non-volatile memory (NVM) devices, popularly described as …

Nanoscale resistive switching devices, sometimes termed memristors, have recently
generated significant interest for memory, logic and neuromorphic applications. Resistive …

This review article introduces resistive switching processes that are being considered for
nanoelectronic nonvolatile memories. The three main classes are based on an …

Many metal–insulator–metal systems show electrically induced resistive switching effects
and have therefore been proposed as the basis for future non-volatile memories. They …

Rapid advances in information technology rely on high-speed and large-capacity
nonvolatile memories. A number of alternatives to contemporary Flash memory have been …

Nanoscale metal/oxide/metal switches have the potential to transform the market for
nonvolatile memory and could lead to novel forms of computing. However, progress has …

Historically, memory technologies have been evaluated based on their storage density, cost,
and latencies. Beyond these metrics, the need to enable smarter and intelligent computing …