In this paper, a further leakage reduction of AlGaN/GaN Schottky barrier diodes with gated
edge termination (GET-SBDs) has been achieved by optimizing the physical vapor …

In this paper, we have extensively investigated the impact of anode recess on the reverse
leakage current, forward voltage (), and dynamic characteristics of Au-free AlGaN/GaN …

In this letter, we identified a dominant buffer trapping causing a bias-dependent dynamic
RON for AlGaN/GaN Schottky barrier diodes (SBDs) fabricated on a C-doped AlGaN buffer …

Abstract AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal
(ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse …

This paper presents a combined technique of high voltage off-state stress and current
transient measurements to investigate the trapping/de-trapping characteristics of Au-free …

In this paper, we report a high-performance AlGaN/GaN Schottky barrier diode (SBD) based
on super-lattice structure. The stacking of five AlGaN/GaN heterostructures yields a small …

This article reports trap-related forward conduction instability of GaN quasi-vertical pin
diodes grown on a Si substrate. Three hole traps with activation energies of 0.38, 0.60, and …

In this paper, we report the results of an experimental analysis of the degradation induced by
ON-state stress in GaN-based Schottky barrier diodes (SBDs). When a high stress current is …

In this paper, we present the results of a combined measurement/simulation analysis of the
degradation induced by on-state stress in Au-free AlGaN/gallium-nitride-on-Si Schottky …

Through this work, we report a shift in the turn-on voltage of recessed AlGaN/GaN Schottky
barrier diodes (SBDs) upon subjecting the device to reverse bias constant voltage stress. A …