[图书][B] Glass: mechanics and technology
E Le Bourhis - 2014 - books.google.com
Glass is a material with essentially unlimited application possibilities. This second edition of
a comprehensive reference in glass science, points out the correlation between the …
a comprehensive reference in glass science, points out the correlation between the …
Thermometry of AlGaN/GaN HEMTs using multispectral raman features
In this paper, we utilize micro-Raman spectroscopy to measure temperature and stress in
state-of-the-art AlGaN/GaN HEMTs. A rigorous discussion on the physical accuracy …
state-of-the-art AlGaN/GaN HEMTs. A rigorous discussion on the physical accuracy …
Young modulus and Poisson ratio measurements of TiO2 thin films deposited with Atomic Layer Deposition
Atomic Layer Deposition (ALD) allows the deposition of thin films onto flat as well as
complex geometry surfaces with excellent conformality. Thicknesses of few atomic layers …
complex geometry surfaces with excellent conformality. Thicknesses of few atomic layers …
Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation
MG Ancona, SC Binari, DJ Meyer - Journal of Applied Physics, 2012 - pubs.aip.org
A fully coupled multi-dimensional continuum model of the thermoelectromechanics of GaN
HEMTs is presented and discussed. The governing equations are those of linear …
HEMTs is presented and discussed. The governing equations are those of linear …
Preparation and photocatalytic activity of TiO2 nanotube arrays prepared on transparent spinel substrate
P Petrisková, O Monfort, L Satrapinskyy… - Ceramics …, 2021 - Elsevier
TiO 2 nanotubes (TNTs) were prepared on transparent spinel (MgAl 2 O 4) ceramic material
by anodic oxidation of magnetron sputtered Ti layer. The properties of TNTs were compared …
by anodic oxidation of magnetron sputtered Ti layer. The properties of TNTs were compared …
Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
In this paper, we present finite element simulation results of the transient stress response of
an AlGaN/GaN high electron mobility transistor (HEMT). The modeling technique involves a …
an AlGaN/GaN high electron mobility transistor (HEMT). The modeling technique involves a …
Light-controlled multifunctional reconfigurable structures
Research development of stimuli-actuated materials has become a crucial driving force in
advancing the frontiers of smart devices. Among various responsive mechanisms, localized …
advancing the frontiers of smart devices. Among various responsive mechanisms, localized …
Development of a synchrotron biaxial tensile device for in situ characterization of thin films mechanical response
G Geandier, D Thiaudière… - Review of Scientific …, 2010 - pubs.aip.org
We have developed on the DIFFABS-SOLEIL beamline a biaxial tensile machine working in
the synchrotron environment for in situ diffraction characterization of thin polycrystalline films …
the synchrotron environment for in situ diffraction characterization of thin polycrystalline films …
Elastic anisotropy of polycrystalline Au films: Modeling and respective contributions of X-ray diffraction, nanoindentation and Brillouin light scattering
Elastic properties of non-textured and {111}-fiber-textured gold thin films were investigated
experimentally by several complementary techniques, namely in situ tensile testing under X …
experimentally by several complementary techniques, namely in situ tensile testing under X …
In situ diffraction strain analysis of elastically deformed polycrystalline thin films, and micromechanical interpretation
In situ tensile tests have been carried out under synchrotron radiation on supported gold
(Au) thin films exhibiting a pronounced crystallographic texture. The 2θ shift of X-ray …
(Au) thin films exhibiting a pronounced crystallographic texture. The 2θ shift of X-ray …