The flexoelectric effect is the response of electric polarization to a mechanical strain
gradient. It can be viewed as a higher-order effect with respect to piezoelectricity, which is …

The past decade has seen rapid progress in research into high-performance Ge-on-Si
photodetectors. Owing to their excellent optoelectronic properties, which include high …

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-
strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher …

We report what we believe to be the first demonstration of direct bandgap
electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room …

We demonstrate a high-performance, tensile-strained Ge pin photodetector on Si platform
with an extended detection spectrum of 650–1605 nm and a 3 dB bandwidth of 8.5 GHz …

We demonstrate a 0.25% tensile strained Ge pin photodetector on Si platform that effectively
covers both C and L bands in telecommunications. The direct band edge of the Ge film has …

A silicon-based monolithic laser source has long been envisioned as a key enabling
component for large-scale electronic–photonic integration in future generations of high …

Epitaxially grown Ge layers on Si substrate are shown to reveal an enhanced absorption of
near-infrared light, which is effective for the photodiode application in Si-based photonics …

It has been demonstrated theoretically and experimentally that germanium, with proper
strain engineering and n-type doping, can be an efficient light emitter and a gain medium at …

Lasers on Si are crucial components of monolithic electronic-photonic integration. Recently
our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible …