Conventional silicon (Si)-based power devices face physical limitations—such as switching
speed and energy efficiency—which can make it difficult to meet the increasing demand for …

This paper presents a study on long-distance wireless power transfer (WPT), which
formulates the voltage gain in terms of the coupling coefficient between the power …

The flyback converters are widely used in low power applications. The switch typically
requires 600 V breakdown voltage in order to perform large step-down voltage. Thus, slight …

Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic
devices, such as lower input/output capacitances, a higher switching speed, and a compact …

This paper presents a 250 kHz bidirectional battery charger circuit using a GaN HEMT. The
charger is subjected to a high-/low-side constant voltage at 200 V/20 V. The charger circuit is …

This paper attempts to describe a laser diode driver circuit using the depletion mode gallium
nitride high electron mobility transistor (D-mode GaN HEMT) to generate nanosecond …

This paper attempts to disclose a high-efficiency laser driver which controls laser source for
high-frequency Light Detection and Ranging (LiDAR) applications. The specific LiDAR …

Normally on wide-bandgap (WBG) devices switch faster and have lower power loss
compared to similarly rated normally off devices. However, their application in voltage-fed …

This paper presents a 250 kHz bidirectional ba ery charger circuit using a GaN HEMT. The
charger is subjected to a high-/low-side constant voltage at 200 V/20 V. The charger circuit is …

The flyback converters are widely used in low power applications. The switch typically
requires 600 V breakdown voltage in order to perform large step-down voltage. Thus, slight …