Positron annihilation spectroscopy is particularly suitable for studying vacancy-type
defects<? format?> in semiconductors. Combining state-of-the-art experimental and …

Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Attaining control over the electrical conductivity of gallium nitride through impurity doping is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

We have used positron annihilation spectroscopy to determine the nature and the
concentrations of the open volume defects in as-grown and electron irradiated (E el= 2 M e …

The diffusion of relevant native point defects in wurtzite GaN crystals is investigated using
first-principles density-functional pseudopotential calculations. Our reexamination of the …

The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two
that are critical to a number of technologies in modern life—the other being silicon. Light …

Using hybrid density functional theory, we address point defects susceptible to cause charge
compensation upon Mg doping of GaN. We determine the free energy of formation of the …

Defects may cause compensation or act as recombination centers in Mg-doped GaN. Using
hybrid functional calculations, we investigate the effects of nitrogen vacancies (VN) and Mg …

The local-density and generalized gradient approximations (LDA and GGA) to density
functional theory (DFT) exhibit incomplete error cancellation when energy differences are …