Performance analysis of junctionless multi-bridge channel FET with strained SiGe application
In this work, a 12 nm 3-Dimensional (3D) strained Junctionless (JL) Multi-Bridge Channel
Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to …
Field Effect Transistor (MBCFET) with different Germanium (Ge) mole fractions from 0.1 to …
Modeling of inversion and centroid charges of long channel strained-silicon surrounding gate MOSFETs incorporating quantum effects
This paper presents a modeling approach for strained silicon surrounding gate MOSFETs.
The main contribution of this work is the simplification of the charge model by using an …
The main contribution of this work is the simplification of the charge model by using an …
Analysis of nano sheet field effect transistor based on performance under different temperature and doping concentrations for 12 nm device
This paper presents a simulation study on a 12 nm Gate-all-around n-type Metal Oxide
Semiconductor (GAA-nMOSFET), investigating the effects of temperature variations and …
Semiconductor (GAA-nMOSFET), investigating the effects of temperature variations and …
Novel Analytical Model for Computing Subthreshold Current in Heterostructure p-MOSFET incorporating Band-To-Band Tunneling Effect
A Deyasi, S Mukhopadhyay… - Journal of Physics …, 2020 - iopscience.iop.org
Subthreshold current for heterostructure pMOSFET is analytically explored as a function of
applied bias for Si-Si x Ge 1-x material system in presence of band-to-band tunneling …
applied bias for Si-Si x Ge 1-x material system in presence of band-to-band tunneling …
Investigation of low temperature performance in heterostructure strained-Si n-MOSFET
This paper explorers the low temperature performance study of heterostructure strained-Si
device using analytical electron mobility modeling. A long channel device reported in …
device using analytical electron mobility modeling. A long channel device reported in …
Novel Threshold Voltage Model incorporating Band-To-Band Tunneling in Heterostructure p-MOSFET
Threshold voltage (with and without body bias) for heterostructure pMOSFET is analytically
explored as a function of applied bias for Si-SixGe1-x material system in presence of band …
explored as a function of applied bias for Si-SixGe1-x material system in presence of band …
[PDF][PDF] EXPLICIT CHARGE-BASED MODEL FOR STRAINED-SILICON GATE-ALL-AROUND MOSFET INCLUDING QUANTUM AND SHORT CHANNEL EFFECTS
FKB ABD HAMID - 2020 - eprints.utm.my
In the recent development of advanced nanoelectronic devices, strain application on silicon
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key …
Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been identified as a key …
Investigation of 30nm Tri-layered Strained Silicon HOI MOSFET using TCAD
L Khiangte, RS Dhar - … Conference on Circuits and Systems in …, 2018 - ieeexplore.ieee.org
This paper explores the 30nm channel length tri-layered strained channel Heterostructure
on Insulator (HOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The effects …
on Insulator (HOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFET). The effects …
Double Strained Channel MOSFET: Deep Into Sub-Microns
L Khiangte, RS Dhar - 2018 Conference on Information and …, 2018 - ieeexplore.ieee.org
Development of MOSFET with an intrusion of two strained silicon layers in the channel
region has been carried out leading to the advent of 50nm and 100nm channel length …
region has been carried out leading to the advent of 50nm and 100nm channel length …
[引用][C] Strain engineering analysis for nanoscaled tri-layered heterostructure-on-insulator
Nano regime device with 30 nm channel length is designed and developed with the novel
trilayered channel structure incorporating double strained silicon technology for the …
trilayered channel structure incorporating double strained silicon technology for the …