Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have
attracted a lot of attention due to their rich material diversity and stack geometry, precise …

This study explores the optimization of a hetero-dielectric tunnel field-effect transistor
(HDTFET) structure to improve device performance. By incorporating a high-k oxide pocket …

A thorough investigation into the development and performance assessment of biosensors
that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from …

Tunneling FET (TFET) has been demonstrated as a favorable candidate to replace
conventional MOSFETs in low-power applications. However, there are many challenges that …

Traditional transistors based on complementary metal-oxide-semiconductor (CMOS) and
metal-oxide-semiconductor field-effect transistors (MOSFETs) are facing significant …

This work thoroughly investigates the variations in geometrical parameters of both existing
Tunnel Field-Effect Transistors (TFETs) and proposed Double-Gate Junctionless Tunnel …

Scaling down the body thickness (T b) of double-gate tunnel field-effect transistors (DG-
TFETs) is helpful in suppressing short-channel effects, but it may give rise to thin-body …

The failure of MOSFET at ultra-small dimensions has directed researchers to investigate
alternate FETs. Vast applications and the compactness of integrated circuits have made the …

Tunneling field effect transistors (TFET) have emerged as promising candidates for
integrated circuits beyond conventional metal oxide semiconductor field effect transistors …

As the demand for high-power electronics spans diverse industries, the pursuit of innovative
semiconductor devices capable of meeting burgeoning power requirements becomes …