The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the
silicon dioxide layer used as a gate dielectric becoming so thin that the gate leakage current …

The search for high dielectric constant (high-k) gate dielectric materials for field-effect
transistor-enabled (FET) applications has stimulated important research activities in both …

This paper reviews and compares predictions of the Dutta-Horn model of low-frequency
excess (1/f) noise with experimental results for thin metal films, MOS transistors, and …

The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …

Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …

Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …

The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential
high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by …

Semiconductors are key to our modern society, enabling a myriad of fields, including
electronics, photovoltaics, and photonics. The performance of semiconductor devices can be …

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to
introduce new functionalities to semiconductor devices. Key to electrically coupling …

This work demonstrates the growth of crystalline SrTiO3 (STO) directly on germanium via a
chemical method. After thermal deoxidation, the Ge substrate is transferred in vacuo to the …