Review of Thermal Design of SiC Power Module for Motor Drive in Electrical Vehicle Application

P Ning, X Hui, D Li, Y Kang, J Yang… - CES Transactions on …, 2024 - ieeexplore.ieee.org
In the current vehicle electric propulsion systems, the thermal design of power modules
heavily relies on empirical knowledge, making it challenging to effectively optimize …

[HTML][HTML] A Review of Wide Bandgap Semiconductors: Insights into SiC, IGZO, and Their Defect Characteristics

Q Shangguan, Y Lv, C Jiang - Nanomaterials, 2024 - pmc.ncbi.nlm.nih.gov
Although the irreplaceable position of silicon (Si) semiconductor materials in the field of
information has become a consensus, new materials continue to be sought to expand the …

Synthesis and property enhancement of Ti-Si/SiC composites by reactive infiltration for semiconductor applications

Z Zhao, Y Liu, B Zhou, K Zhang, X Liu, Z Huang - Ceramics International, 2024 - Elsevier
Poor machinability and limited electrical conductivity present significant challenges for
silicon carbide (SiC) composites used in the semiconductor industry. In this study, Ti-Si/SiC …

Radiation hardened MOSFETs realized by Al2O3 induced Bi-GdF3 with trapped interfacial electrons located in Ti3C2Tx framework

T Zhang, Y Hong, J Li, Y Li, H Zhao, K Cui… - … Science and Technology, 2024 - Elsevier
The radiation resistance of Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
is of great significance when applied in aerospace. However, it is still challenging to obtain …

Impact of fast-frequency pulsed current wave on microstructure and mechanical performances of 1060 Al alloy welded by FFP-VPTIG

Z Wang, Z Zhu, Y Wang, Z Gui, D Jiang, J Wu… - Journal of Manufacturing …, 2024 - Elsevier
A novel welding current waveform has been designed to address the defects of pores and
insufficient mechanical performances of 1060-Al alloy welded by conventional variable …

[PDF][PDF] Hardware Testing Methodologies for Wide Bandgap High-Power Converters

Z Chen, Z Guo, C Chen, AQ Huang - Electronics, 2024 - researchgate.net
Wide bandgap (WBG) power semiconductor devices are increasingly replacing silicon
IGBTs in high-power and high-voltage power electronics applications. However, there is a …

Temperature-Dependent Formation of Carbon Nanodomains in Silicon Oxycarbide Glass─ A Reactive Force Field MD Study

BM Kriesche, FRS Purtscher… - The Journal of …, 2024 - ACS Publications
Novel anode materials for lithium-ion batteries (LIBs) are constantly being explored to further
improve battery performance. In this work, ReaxFF molecular dynamics (MD) simulations are …

Micromechanical properties characterization of 4H–SiC single crystal by indentation and scratch methods

D Hou, T Lv, Y Ouyang, F Dong, S Liu - Materials Science in Semiconductor …, 2024 - Elsevier
Growth and micromachining of single crystal silicon carbide (SiC) have drawn extensive
attention in wide bandgap semiconductors and remained challenging. The micromechanical …

Nature of electrically detected magnetic resonance in highly nitrogen-doped -SiC single crystals

M Holiatkina, A Solodovnyk, O Laguta, P Neugebauer… - Physical Review B, 2024 - APS
This work focuses on unraveling electron paramagnetic resonance (EPR) and electrically
detected magnetic resonance (EDMR) properties of n-type 6 H silicon carbide (SiC) single …

A New Solution to the Grain Boundary Grooving Problem in Polycrystalline Thin Films When Evaporation and Diffusion Meet in Power Electronic Devices

T Hamieh, A Ibrahim, Z Khatir - Micromachines, 2024 - mdpi.com
This paper constituted an extension of two previous studies concerning the mathematical
development of the grain boundary grooving in polycrystalline thin films in the cases of …