Theory of positrons in solids and on solid surfaces

MJ Puska, RM Nieminen - Reviews of modern Physics, 1994 - APS
Various experimental methods based on positron annihilation have evolved into important
tools for researching the structure and properties of condensed matter. In particular, positron …

Prediction of spectral phonon mean free path and thermal conductivity with applications to thermoelectrics and thermal management: a review

T Feng, X Ruan - Journal of Nanomaterials, 2014 - Wiley Online Library
We give a review of the theoretical approaches for predicting spectral phonon mean free
path and thermal conductivity of solids. The methods can be summarized into two …

Tight-binding modelling of materials

CM Goringe, DR Bowler… - Reports on Progress in …, 1997 - iopscience.iop.org
The tight-binding method of modelling materials lies between the very accurate, very
expensive, ab initio methods and the fast but limited empirical methods. When compared …

Defect migration in crystalline silicon

LJ Munro, DJ Wales - Physical Review B, 1999 - APS
A number of vacancy and interstitial defect migration mechanisms are characterized for
crystalline silicon using supercells containing 64 and 216 atoms and a tight-binding …

Comparative study of silicon empirical interatomic potentials

H Balamane, T Halicioglu, WA Tiller - Physical Review B, 1992 - APS
We have performed a comparative study of six classical many-body potentials for silicon
(Pearson, Takai, Halicioglu, and Tiller; Biswas and Hamann; Stillinger and Weber; Dodson …

Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes

M Tang, L Colombo, J Zhu, TD De La Rubia - Physical Review B, 1997 - APS
Tight-binding molecular dynamics simulations are performed to study self-diffusion,
interstitial-vacancy recombination, and formation volumes of point defects in crystalline …

Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon

MJ Puska, S Pöykkö, M Pesola, RM Nieminen - Physical review B, 1998 - APS
The convergence of first-principles supercell calculations for defects in semiconductors is
studied with the vacancy in bulk Si as a test case. The ionic relaxations, defect formation …

Transferable tight-binding models for silicon

I Kwon, R Biswas, CZ Wang, KM Ho, CM Soukoulis - Physical Review B, 1994 - APS
A transferable tight-binding model for silicon is found by fitting the energies of silicon in
various bulk crystal structures and examining functional parametrizations of the tight-binding …

Improving the convergence of defect calculations in supercells: An ab initio study of the neutral silicon vacancy

MIJ Probert, MC Payne - Physical Review B, 2003 - APS
We present a systematic methodology for the accurate calculation of defect structures in
supercells, which we illustrate with a study of the neutral vacancy in silicon. This is a …

Bond-order potentials: Theory and implementation

AP Horsfield, AM Bratkovsky, M Fearn, DG Pettifor… - Physical Review B, 1996 - APS
The background theory and the details required for implementation of bond-order potentials
are presented in a systematic fashion. The theory is an O (N) implementation of tight binding …