Theory of positrons in solids and on solid surfaces
MJ Puska, RM Nieminen - Reviews of modern Physics, 1994 - APS
Various experimental methods based on positron annihilation have evolved into important
tools for researching the structure and properties of condensed matter. In particular, positron …
tools for researching the structure and properties of condensed matter. In particular, positron …
Prediction of spectral phonon mean free path and thermal conductivity with applications to thermoelectrics and thermal management: a review
We give a review of the theoretical approaches for predicting spectral phonon mean free
path and thermal conductivity of solids. The methods can be summarized into two …
path and thermal conductivity of solids. The methods can be summarized into two …
Tight-binding modelling of materials
CM Goringe, DR Bowler… - Reports on Progress in …, 1997 - iopscience.iop.org
The tight-binding method of modelling materials lies between the very accurate, very
expensive, ab initio methods and the fast but limited empirical methods. When compared …
expensive, ab initio methods and the fast but limited empirical methods. When compared …
Defect migration in crystalline silicon
LJ Munro, DJ Wales - Physical Review B, 1999 - APS
A number of vacancy and interstitial defect migration mechanisms are characterized for
crystalline silicon using supercells containing 64 and 216 atoms and a tight-binding …
crystalline silicon using supercells containing 64 and 216 atoms and a tight-binding …
Comparative study of silicon empirical interatomic potentials
H Balamane, T Halicioglu, WA Tiller - Physical Review B, 1992 - APS
We have performed a comparative study of six classical many-body potentials for silicon
(Pearson, Takai, Halicioglu, and Tiller; Biswas and Hamann; Stillinger and Weber; Dodson …
(Pearson, Takai, Halicioglu, and Tiller; Biswas and Hamann; Stillinger and Weber; Dodson …
Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studiesof self-diffusion, interstitial-vacancy recombination, and formation volumes
Tight-binding molecular dynamics simulations are performed to study self-diffusion,
interstitial-vacancy recombination, and formation volumes of point defects in crystalline …
interstitial-vacancy recombination, and formation volumes of point defects in crystalline …
Convergence of supercell calculations for point defects in semiconductors: Vacancy in silicon
MJ Puska, S Pöykkö, M Pesola, RM Nieminen - Physical review B, 1998 - APS
The convergence of first-principles supercell calculations for defects in semiconductors is
studied with the vacancy in bulk Si as a test case. The ionic relaxations, defect formation …
studied with the vacancy in bulk Si as a test case. The ionic relaxations, defect formation …
Transferable tight-binding models for silicon
I Kwon, R Biswas, CZ Wang, KM Ho, CM Soukoulis - Physical Review B, 1994 - APS
A transferable tight-binding model for silicon is found by fitting the energies of silicon in
various bulk crystal structures and examining functional parametrizations of the tight-binding …
various bulk crystal structures and examining functional parametrizations of the tight-binding …
Improving the convergence of defect calculations in supercells: An ab initio study of the neutral silicon vacancy
MIJ Probert, MC Payne - Physical Review B, 2003 - APS
We present a systematic methodology for the accurate calculation of defect structures in
supercells, which we illustrate with a study of the neutral vacancy in silicon. This is a …
supercells, which we illustrate with a study of the neutral vacancy in silicon. This is a …
Bond-order potentials: Theory and implementation
AP Horsfield, AM Bratkovsky, M Fearn, DG Pettifor… - Physical Review B, 1996 - APS
The background theory and the details required for implementation of bond-order potentials
are presented in a systematic fashion. The theory is an O (N) implementation of tight binding …
are presented in a systematic fashion. The theory is an O (N) implementation of tight binding …