A review of silicon carbide MOSFETs in electrified vehicles: Application, challenges, and future development
B Shi, AI Ramones, Y Liu, H Wang, Y Li… - IET Power …, 2023 - Wiley Online Library
Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide
(SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by …
(SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by …
[PDF][PDF] Analysis of performance and reliability of sub-kV SiC and GAN cascode power electronic devices
Y Gunaydin - 2023 - researchgate.net
The energy is one of the main infrastructures for human life and industries. Therefore, many
studies have been investigated on energy resources, and especially, lots of renewable …
studies have been investigated on energy resources, and especially, lots of renewable …
SiC-VSI with sinusoidal voltages for an enhanced sensorless control of the induction machine
H Al-Badrani, S Feuersänger… - 2018 IEEE 4th Southern …, 2018 - ieeexplore.ieee.org
The present paper presents the enhancement of the sensorless field oriented control by
using the measured terminal voltages instead of the calculated ones in the fundamental …
using the measured terminal voltages instead of the calculated ones in the fundamental …
WBG inverter for commercial power generation and vehicle electrification
D Murthy-Bellur, E Ayana, S Kunin… - … on Integrated Power …, 2015 - ieeexplore.ieee.org
In recent years, commercially available wide bandgap (WBG) devices and modules have
sparked significant interest among several industries to develop power electronics using …
sparked significant interest among several industries to develop power electronics using …
Development of auxiliary converter based on 1700V/325A full SiC MOSFET for urban rail transit vehicles
D Wu, C Xiao, H Zhang, W Liang - 2017 IEEE Transportation …, 2017 - ieeexplore.ieee.org
At present, the SiC devices have been widely concerned with the excellent characteristics of
low switching losses, which can significantly improve the frequency of power electronic …
low switching losses, which can significantly improve the frequency of power electronic …
Loss model and efficiency analysis of tram auxiliary converter based on a SiC device
H Liu, X Huang, F Lin, Z Yang - Energies, 2017 - mdpi.com
Currently, the auxiliary converter in the auxiliary power supply system of a modern tram
adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module …
adopts Si IGBT as its switching device and with the 1700 V/225 A SiC MOSFET module …
Development of a High Power Density Auxiliary Converter Based on 1700V 225A SiC MOSFET for Trams
L Hao, F Lin, Z Yang, H Cao… - 2018 International Power …, 2018 - ieeexplore.ieee.org
The application of the SiC MOSFET can improve the efficiency and power density of the
auxiliary converter for trams. In this paper, the design process is given. According to the …
auxiliary converter for trams. In this paper, the design process is given. According to the …
PWM strategy and loss reduction of high-frequency link AC/DC converter using SiC-MOSFET
Y Matsui, K Suzuki, T Takeshita - IECON 2016-42nd Annual …, 2016 - ieeexplore.ieee.org
This paper presents a simple PWM strategy of high-frequency link AC/DC converter which
controls the output voltage and the input current, simultaneously. In the PWM strategy …
controls the output voltage and the input current, simultaneously. In the PWM strategy …