Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
Excitation power and temperature dependences of the photoluminescence (PL) spectra are
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences …
Advances in the LED materials and architectures for energy-saving solid-state lighting toward “lighting revolution”
In this paper, we review the recent developments (in years 2010–2011) of energy-saving
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
solid-state lighting. The industry of white light-emitting diodes (LEDs) has made significant …
Study on the current spreading effect and light extraction enhancement of vertical GaN/InGaN LEDs
This study analyzes the current spreading effect and light extraction efficiency (LEE) of
lateral and vertical light-emitting diodes (LEDs). Specifically, this study uses a fully 2-D …
lateral and vertical light-emitting diodes (LEDs). Specifically, this study uses a fully 2-D …
Continuous-wave operation of (Al, In) GaN distributed-feedback laser diodes with high-order notched gratings
We report on the continuous-wave, room-temperature operation of a distributed-feedback
laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and …
laser diode (DFB-LD) with high-order notched gratings. The design, fabrication, and …
Theoretical study of nitride short period superlattices
I Gorczyca, T Suski, NE Christensen… - Journal of Physics …, 2018 - iopscience.iop.org
Discussion of band gap behavior based on first principles calculations of electronic band
structures for various short period nitride superlattices is presented. Binary superlattices, as …
structures for various short period nitride superlattices is presented. Binary superlattices, as …
Low resistivity HfN x grown by plasma-assisted ALD with external rf substrate biasing
Plasma-assisted atomic layer deposition (ALD) of HfNx thin films using tris (dimethylamino)
cyclopentadienylhafnium [CpHf (NMe2) 3] as the Hf precursor and H2 plasma as the …
cyclopentadienylhafnium [CpHf (NMe2) 3] as the Hf precursor and H2 plasma as the …
[HTML][HTML] Dynamic characteristics of 410 nm semipolar (202 1) III-nitride laser diodes with a modulation bandwidth of over 5 GHz
The dynamic characteristics of III-nitride multi-quantum well laser diodes (LDs) emitting at
410 nm were investigated. LDs were grown on semipolar (20 2 1) bulk GaN substrates and …
410 nm were investigated. LDs were grown on semipolar (20 2 1) bulk GaN substrates and …
On the effect of step-doped quantum barriers in InGaN/GaN light emitting diodes
InGaN/GaN light-emitting diodes (LEDs) make an important class of optoelectronic devices,
increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation …
increasingly used in lighting and displays. Conventional InGaN/GaN LEDs of c-orientation …
Determination of internal parameters for AlGaN-cladding-free m-plane InGaN/GaN laser diodes
RM Farrell, DA Haeger, PS Hsu, K Fujito… - Applied Physics …, 2011 - pubs.aip.org
The dependence of device characteristics on cavity length is used to determine the injection
efficiency, internal loss, and material gain of electrically injected AlGaN-cladding-free m …
efficiency, internal loss, and material gain of electrically injected AlGaN-cladding-free m …
Cascade mechanism and mechanical property of the dislocation loop formation in GaN twin crystal-induced crystallization
M Tan, T Gao, Q Xiao, Y Gao, Y Liu, Q Xie… - Materials Science in …, 2022 - Elsevier
Single-crystal gallium nitride (GaN) is considered as the key to future high-performance light
emitters and power devices. Nevertheless, a mixed phase with micro twins often exists in …
emitters and power devices. Nevertheless, a mixed phase with micro twins often exists in …