Atom probe tomography (APT) provides three-dimensional compositional mapping with sub-
nanometre resolution. The sensitivity of APT is in the range of parts per million for all …

Existing models of electrical contacts are often inapplicable at the nanoscale because there
are significant differences between nanostructures and bulk materials arising from unique …

Semiconductor nanowires show promise for many device applications,,, but controlled
doping with electronic and magnetic impurities remains an important challenge …

The development of three-dimensional (3-D), characterisation techniques with high spatial
and mass resolution is crucial for understanding and developing advanced materials for …

Metal impurities have been used to mediate the growth of anisotropic crystalline
semiconductor nanowires for a variety of applications. A majority of efforts have employed …

Approximately 30 years after the first use of focused ion beam (FIB) instruments to prepare
atom probe tomography specimens, this technique has grown to be used by hundreds of …

We quantitatively examine the relative influence of bulk impurities and surface states on the
electrical properties of Ge nanowires with and without phosphorus (P) doping. The …

The authors report the use of a radio frequency (rf) silicon nanowire mechanical oscillator as
a low-temperature nuclear magnetic resonance force sensor to detect the statistical …

The quantitative scanning photocurrent microscopy have revealed the nonuniform nanowire
doping profiles by using Kelvin probe force microscopy (KPFM) as a technique to determine …

We present electronic transport measurements in individual Au-catalyst/Ge-nanowire
interfaces demonstrating the presence of a Schottky barrier. Surprisingly, the small-bias …