Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures
We present compact models that capture published cryogenic temperature effects on silicon
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …
Characterization and modeling of 22 nm FDSOI cryogenic RF CMOS
Analog and RF mixed-signal cryogenic-CMOS circuits with ultrahigh gain-bandwidth product
can address a range of applications such as interface circuits between superconducting …
can address a range of applications such as interface circuits between superconducting …
Estimation of MOSFET channel noise and noise performance of CMOS LNAs at cryogenic temperatures
The design of cryogenic CMOS electronics for quantum computing applications, including
critical radio frequency blocks such as low noise amplifiers (LNAs), is hindered by the lack of …
critical radio frequency blocks such as low noise amplifiers (LNAs), is hindered by the lack of …
Revisiting Dynamic Logic—A True Candidate for Energy-Efficient Cryogenic Operation in Nanoscaled Technologies
Dynamic logic is a high-speed technology that was previously used in mature technologies,
but lost popularity due to the increased leakage and process variations in advanced …
but lost popularity due to the increased leakage and process variations in advanced …
Cryogenic CMOS for Quantum Computing
To fully deploy power of quantum computing (QC), practical quantum computers require the
integration of a large number of qubits, eg, in the thousands and millions, to overcome the …
integration of a large number of qubits, eg, in the thousands and millions, to overcome the …
Cryogenic CMOS RF Circuits: A Promising Approach for Large-Scale Quantum Computing
Y Guo, Q Liu, T Li, N Deng, Z Wang… - … on Circuits and …, 2023 - ieeexplore.ieee.org
This brief presents a brief overview of cryogenic CMOS circuits for large-scale quantum
computing, especially the cryogenic RF circuits from the functional blocks to system-level …
computing, especially the cryogenic RF circuits from the functional blocks to system-level …
Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al₂O₃ Capping Layer and TiN Gate
D Wang, J Zheng, Y Zhang, T Xu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, the electrical properties of nMOSFET devices with different high-Al 2 O 3
capping layer thickness and TiN electrode have been systematically studied at deep …
capping layer thickness and TiN electrode have been systematically studied at deep …
Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion …
HS Jeong, WS Park, HB Jo, IG Lee… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
This paper presents a physics-based analytical channel charge model for indium-rich In x
Ga 1-x As/In 0.52 Al 0.48 As quantum-well (QW) field-effect transistors (FETs) that is …
Ga 1-x As/In 0.52 Al 0.48 As quantum-well (QW) field-effect transistors (FETs) that is …
Integrated Control Addressing Circuits for a Surface Code Quantum Computer in Silicon
Quantum computers require a coordinated operation on a large number of quantum bits
(qubits), presenting considerable obstacles such as system integration on a large scale …
(qubits), presenting considerable obstacles such as system integration on a large scale …
Scalable Addressing Circuits for a Surface Code Silicon-based Quantum Computer
A scalable circuit is designed to provide control signals for local and global operation of
surface quantum error correction codes through a modular design of tiered switches …
surface quantum error correction codes through a modular design of tiered switches …