Compact modeling of temperature effects in FDSOI and FinFET devices down to cryogenic temperatures

G Pahwa, P Kushwaha, A Dasgupta… - … on Electron Devices, 2021 - ieeexplore.ieee.org
We present compact models that capture published cryogenic temperature effects on silicon
carrier mobility and velocity saturation, as well as fully depleted silicon on insulator (FDSOI) …

Characterization and modeling of 22 nm FDSOI cryogenic RF CMOS

W Chakraborty, KA Aabrar, J Gomez… - IEEE Journal on …, 2021 - ieeexplore.ieee.org
Analog and RF mixed-signal cryogenic-CMOS circuits with ultrahigh gain-bandwidth product
can address a range of applications such as interface circuits between superconducting …

Estimation of MOSFET channel noise and noise performance of CMOS LNAs at cryogenic temperatures

X Chen, H Elgabra, CH Chen… - 2021 IEEE International …, 2021 - ieeexplore.ieee.org
The design of cryogenic CMOS electronics for quantum computing applications, including
critical radio frequency blocks such as low noise amplifiers (LNAs), is hindered by the lack of …

Revisiting Dynamic Logic—A True Candidate for Energy-Efficient Cryogenic Operation in Nanoscaled Technologies

I Stanger, N Roknian, N Shavit… - … on Circuits and …, 2023 - ieeexplore.ieee.org
Dynamic logic is a high-speed technology that was previously used in mature technologies,
but lost popularity due to the increased leakage and process variations in advanced …

Cryogenic CMOS for Quantum Computing

R Absar, H Elgabra, D Ma, Y Zhao, L Wei - Design and Applications of …, 2023 - Springer
To fully deploy power of quantum computing (QC), practical quantum computers require the
integration of a large number of qubits, eg, in the thousands and millions, to overcome the …

Cryogenic CMOS RF Circuits: A Promising Approach for Large-Scale Quantum Computing

Y Guo, Q Liu, T Li, N Deng, Z Wang… - … on Circuits and …, 2023 - ieeexplore.ieee.org
This brief presents a brief overview of cryogenic CMOS circuits for large-scale quantum
computing, especially the cryogenic RF circuits from the functional blocks to system-level …

Temperature-Dependent Electrical Properties of nMOSFETs With Different Thickness Al₂O₃ Capping Layer and TiN Gate

D Wang, J Zheng, Y Zhang, T Xu… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this article, the electrical properties of nMOSFET devices with different high-Al 2 O 3
capping layer thickness and TiN electrode have been systematically studied at deep …

Physics-Based Analytical Channel Charge Model of InxGa1-xAs/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion …

HS Jeong, WS Park, HB Jo, IG Lee… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
This paper presents a physics-based analytical channel charge model for indium-rich In x
Ga 1-x As/In 0.52 Al 0.48 As quantum-well (QW) field-effect transistors (FETs) that is …

Integrated Control Addressing Circuits for a Surface Code Quantum Computer in Silicon

R Absar, ZD Merino, H Elgabra, X Chen… - Proceedings of the 17th …, 2022 - dl.acm.org
Quantum computers require a coordinated operation on a large number of quantum bits
(qubits), presenting considerable obstacles such as system integration on a large scale …

Scalable Addressing Circuits for a Surface Code Silicon-based Quantum Computer

R Absar, ZD Merino, H Elgabra, X Chen, J Baugh… - Authorea …, 2023 - techrxiv.org
A scalable circuit is designed to provide control signals for local and global operation of
surface quantum error correction codes through a modular design of tiered switches …