A+ 20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical
(ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process …

We propose a nonlinear device model and a systematic methodology to generate maximum
power at any desired harmonic. The proposed power optimization technique is based on the …

A frequency-scalable, three-stage, transformer-coupled millimeter-wave power amplifier
(PA) is implemented in 130 nm SiGe-BiCMOS. Differential common-base gain stages extend …

This article proposes a complementary distributed power amplifier (DPA) using stacked gain
cells with multiple input driving signals. The stack multi-drive compensates for the increasing …

Millimeter-waves offer promising opportunities and interesting challenges to silicon
integrated circuit and system designers. These challenges go beyond standard circuit …

This paper presents an explicit analysis of the bandwidth and port imbalance of a subquarter-
wavelength transmission-line (t-line) transformer and verifies this with the design of a two …

This paper presents the design, analysis, and measurement of a pseudodifferential
distributed power amplifier in a 0.13-μm SiGe BiCMOS process. To mitigate the large loaded …

In this paper, a distributed active transformer for the operation in the millimeter-wave
frequency range is presented. The transformer utilizes stacked coupled wires as opposed to …

We review the recent advances on the implementation of electronic circuits that operate in
the millimeter-wave (30–300 GHz) and terahertz (300–3000 GHz) frequency ranges. The …

A 77-GHz,+ 17.5 dBm power amplifier (PA) with fully integrated 50-Omega input and output
matching and fabricated in a 0.12-mum SiGe BiCMOS process is presented. The PA …