Recent progress of laser processing technology in micro-LED display manufacturing: A review

L Song, X Yong, P Zhang, S Song, K Chen… - Optics & Laser …, 2025 - Elsevier
Micro-LED undoubtedly stands out as a highly anticipated technology when it comes to the
innovation of future display technologies. Micro-LED technology surpasses traditional …

Structural, Electronic and Thermoelectric Properties of Bi2Se3 Thin Films Deposited by RF Magnetron Sputtering

S Gautam, AK Verma, A Balapure, B Singh… - Journal of Electronic …, 2022 - Springer
Abstract Thin films of Bi2Se3 were deposited on Si (100) substrates using RF magnetron
sputtering at a deposition temperature of 633 K. The surface morphology of Bi2Se3 films …

Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectors

C Ramesh, P Tyagi, B Bhattacharyya, S Husale… - Journal of Alloys and …, 2019 - Elsevier
We report on high-responsivity metal-semiconductor-metal (MSM) structure based ultraviolet
(UV) GaN photodetectors fabricated on various GaN nanostructures such as porous …

Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

V Aggarwal, C Ramesh, U Varshney, P Tyagi… - Applied Physics A, 2022 - Springer
We have studied the crystalline, optical and photo-response properties of epitaxial GaN films
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …

Controlled epitaxial growth of GaN nanostructures on sapphire (11–20) using laser molecular beam epitaxy for photodetector applications

V Aggarwal, C Ramesh, P Tyagi, S Gautam… - Materials Science in …, 2021 - Elsevier
We have grown various epitaxial GaN nanostructures on sapphire (11–20) substrates by
tuning the buffer layer growth conditions in laser molecular beam epitaxy (LMBE) process …

Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)

V Aggarwal, S Gautam, U Varshney… - Journal of Materials …, 2023 - Springer
We have grown epitaxial GaN nanowalls network (NWN) on AlN buffered pre-nitridated
sapphire (11–20) substrate using AlN buffer by laser-assisted molecular beam epitaxy …

A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition

W Wang, W Yang, H Wang, Y Zhu, M Yang, J Gao, G Li - Vacuum, 2016 - Elsevier
Abstract∼ 500 nm-thick c-plane and a-plane GaN epitaxial films on c-plane and r-plane
sapphire substrates by pulsed laser deposition have been grown and explored. The∼ 500 …

Epitaxial growth of GaN films on lattice-matched ScAlMgO 4 substrates

W Wang, T Yan, W Yang, Y Zhu, H Wang, G Li, N Ye - CrystEngComm, 2016 - pubs.rsc.org
High-quality GaN films have been epitaxially grown on ScAlMgO4 (SCAM)(0001) substrates
with an in-plane epitaxial relationship of GaN [1− 100]//SCAM [1− 100] by pulsed laser …

Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy

C Ramesh, P Tyagi, G Abhiram, G Gupta… - Journal of Crystal …, 2019 - Elsevier
We have studied the effect of growth temperature (550–700° C) on the morphological,
structural and optical properties of GaN nanostructures grown directly on flexible Ti metal foil …

Effect of nitridation temperature on formation and properties of GaN nanowall networks on sapphire (0 0 0 1) grown by laser MBE

C Ramesh, P Tyagi, BS Yadav, S Ojha… - Materials Science and …, 2018 - Elsevier
Vertical aligned GaN nanowall networks (NWN) have been grown on sapphire (0 0 0 1)
substrates using laser assisted molecular beam epitaxy (LMBE) by tuning the sapphire pre …