Plasmonic colour generation

A Kristensen, JKW Yang, SI Bozhevolnyi… - Nature Reviews …, 2016 - nature.com
Plasmonic colours are structural colours that emerge from resonant interactions between
light and metallic nanostructures. The engineering of plasmonic colours is a promising …

Spintronics: Fundamentals and applications

I Žutić, J Fabian, SD Sarma - Reviews of modern physics, 2004 - APS
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …

Device scaling limits of Si MOSFETs and their application dependencies

DJ Frank, RH Dennard, E Nowak… - Proceedings of the …, 2001 - ieeexplore.ieee.org
This paper presents the current state of understanding of the factors that limit the continued
scaling of Si complementary metal-oxide-semiconductor (CMOS) technology and provides …

Practical Poissonian-Gaussian noise modeling and fitting for single-image raw-data

A Foi, M Trimeche, V Katkovnik… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
We present a simple and usable noise model for the raw-data of digital imaging sensors.
This signal-dependent noise model, which gives the pointwise standard-deviation of the …

High-performance fully depleted silicon nanowire (diameter/spl les/5 nm) gate-all-around CMOS devices

N Singh, A Agarwal, LK Bera, TY Liow… - IEEE Electron …, 2006 - ieeexplore.ieee.org
This paper demonstrates gate-all-around (GAA) n-and p-FETs on a silicon-on-insulator
with/spl les/5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift …

Silicon CMOS devices beyond scaling

W Haensch, EJ Nowak, RH Dennard… - IBM Journal of …, 2006 - ieeexplore.ieee.org
To a large extent, scaling was not seriously challenged in the past. However, a closer look
reveals that early signs of scaling limits were seen in high-performance devices in recent …

Beyond the conventional transistor

HSP Wong - IBM Journal of Research and Development, 2002 - ieeexplore.ieee.org
This paper focuses on approaches to continuing CMOS scaling by introducing new device
structures and new materials. Starting from an analysis of the sources of improvements in …

Strain: A solution for higher carrier mobility in nanoscale MOSFETs

M Chu, Y Sun, U Aghoram… - Annual Review of …, 2009 - annualreviews.org
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown impressive
performance improvements over the past 10 years by incorporating strained silicon (Si) …

Challenges for nanoscale MOSFETs and emerging nanoelectronics

YB Kim - transactions on electrical and electronic materials, 2010 - koreascience.kr
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main
key for continuous progress in silicon-based semiconductor industry over the past three …

High-performance CMOS variability in the 65-nm regime and beyond

K Bernstein, DJ Frank, AE Gattiker… - IBM journal of …, 2006 - ieeexplore.ieee.org
Recent changes in CMOS device structures and materials motivated by impending atomistic
and quantum-mechanical limitations have profoundly influenced the nature of delay and …