Plasmonic colour generation
Plasmonic colours are structural colours that emerge from resonant interactions between
light and metallic nanostructures. The engineering of plasmonic colours is a promising …
light and metallic nanostructures. The engineering of plasmonic colours is a promising …
Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and manipulation of spin
degrees of freedom in solid-state systems. This article reviews the current status of this …
degrees of freedom in solid-state systems. This article reviews the current status of this …
Device scaling limits of Si MOSFETs and their application dependencies
DJ Frank, RH Dennard, E Nowak… - Proceedings of the …, 2001 - ieeexplore.ieee.org
This paper presents the current state of understanding of the factors that limit the continued
scaling of Si complementary metal-oxide-semiconductor (CMOS) technology and provides …
scaling of Si complementary metal-oxide-semiconductor (CMOS) technology and provides …
Practical Poissonian-Gaussian noise modeling and fitting for single-image raw-data
A Foi, M Trimeche, V Katkovnik… - IEEE transactions on …, 2008 - ieeexplore.ieee.org
We present a simple and usable noise model for the raw-data of digital imaging sensors.
This signal-dependent noise model, which gives the pointwise standard-deviation of the …
This signal-dependent noise model, which gives the pointwise standard-deviation of the …
High-performance fully depleted silicon nanowire (diameter/spl les/5 nm) gate-all-around CMOS devices
This paper demonstrates gate-all-around (GAA) n-and p-FETs on a silicon-on-insulator
with/spl les/5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift …
with/spl les/5-nm-diameter laterally formed Si nanowire channel. Alternating phase shift …
Silicon CMOS devices beyond scaling
W Haensch, EJ Nowak, RH Dennard… - IBM Journal of …, 2006 - ieeexplore.ieee.org
To a large extent, scaling was not seriously challenged in the past. However, a closer look
reveals that early signs of scaling limits were seen in high-performance devices in recent …
reveals that early signs of scaling limits were seen in high-performance devices in recent …
Beyond the conventional transistor
HSP Wong - IBM Journal of Research and Development, 2002 - ieeexplore.ieee.org
This paper focuses on approaches to continuing CMOS scaling by introducing new device
structures and new materials. Starting from an analysis of the sources of improvements in …
structures and new materials. Starting from an analysis of the sources of improvements in …
Strain: A solution for higher carrier mobility in nanoscale MOSFETs
M Chu, Y Sun, U Aghoram… - Annual Review of …, 2009 - annualreviews.org
Metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown impressive
performance improvements over the past 10 years by incorporating strained silicon (Si) …
performance improvements over the past 10 years by incorporating strained silicon (Si) …
Challenges for nanoscale MOSFETs and emerging nanoelectronics
YB Kim - transactions on electrical and electronic materials, 2010 - koreascience.kr
Complementary metal-oxide-semiconductor (CMOS) technology scaling has been a main
key for continuous progress in silicon-based semiconductor industry over the past three …
key for continuous progress in silicon-based semiconductor industry over the past three …
High-performance CMOS variability in the 65-nm regime and beyond
K Bernstein, DJ Frank, AE Gattiker… - IBM journal of …, 2006 - ieeexplore.ieee.org
Recent changes in CMOS device structures and materials motivated by impending atomistic
and quantum-mechanical limitations have profoundly influenced the nature of delay and …
and quantum-mechanical limitations have profoundly influenced the nature of delay and …