Tunnel field-effect transistors: State-of-the-art
H Lu, A Seabaugh - IEEE Journal of the Electron Devices …, 2014 - ieeexplore.ieee.org
Progress in the development of tunnel field-effect transistors (TFETs) is reviewed by
comparing experimental results and theoretical predictions against 16-nm FinFET CMOS …
comparing experimental results and theoretical predictions against 16-nm FinFET CMOS …
[图书][B] Fundamentals of tunnel field-effect transistors
During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
knowledge, no book on TFETs currently exists. The proposed book provides readers with …
Study and analysis of the effects of SiGe source and pocket-doped channel on sensing performance of dielectrically modulated tunnel FET-based biosensors
S Kanungo, S Chattopadhyay, PS Gupta… - … on Electron Devices, 2016 - ieeexplore.ieee.org
Dielectrically modulated tunnel FET (DMTFET)-based biosensors show higher sensitivity but
lower subthreshold current compared with their dielectrically modulated FET counterpart. In …
lower subthreshold current compared with their dielectrically modulated FET counterpart. In …
Effect of drain doping profile on double-gate tunnel field-effect transistor and its influence on device RF performance
V Vijayvargiya, SK Vishvakarma - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
In this paper, we have investigated the effect of drain doping profile on a double-gate tunnel
field-effect transistor (DG-TFET) and its radio-frequency (RF) performances. Lateral …
field-effect transistor (DG-TFET) and its radio-frequency (RF) performances. Lateral …
Design and analysis of dual-metal-gate double-cavity charge-plasma-TFET as a label free biosensor
In this paper, the bipolar nature of tunnel field effect transistor (TFET) has been utilized for
the first time for the identification of biomolecules. Charge plasma concept has been …
the first time for the identification of biomolecules. Charge plasma concept has been …
Tunable negative differential resistance in van der Waals heterostructures at room temperature by tailoring the interface
Vertically stacked two-dimensional van der Waals (vdW) heterostructures, used to obtain
homogeneity and band steepness at interfaces, exhibit promising performance for band-to …
homogeneity and band steepness at interfaces, exhibit promising performance for band-to …
Fabrication and Analysis of a Heterojunction Line Tunnel FET
AM Walke, A Vandooren, R Rooyackers… - … on Electron Devices, 2014 - ieeexplore.ieee.org
This paper presents a new integration scheme to fabricate a Si/Si 0.55 Ge 0.45
heterojunction line tunnel field effect transistor (TFET). The device shows an increase in …
heterojunction line tunnel field effect transistor (TFET). The device shows an increase in …
Optimization of gate-on-source-only tunnel FETs with counter-doped pockets
KH Kao, AS Verhulst… - … on Electron Devices, 2012 - ieeexplore.ieee.org
We investigate a promising tunnel FET configuration having a gate on the source only,
which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current …
which is simultaneously exhibiting a steeper subthreshold slope and a higher ON-current …
Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation
In this paper, a charge plasma-based inverted T-shaped source-metal dual line-tunneling
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
field-effect transistor (CP-ITSM-DLTFET) has been proposed to improve the ON current (I …
Influence of drain doping engineering on the ambipolar conduction and high-frequency performance of TFETs
A Shaker, M El Sabbagh… - ieee transactions on …, 2017 - ieeexplore.ieee.org
In this paper, the effect of a proposed drain doping engineering on the ambipolar conduction
and high-frequency performance of tunneling FETs (TFETs) is investigated using 2-D TCAD …
and high-frequency performance of tunneling FETs (TFETs) is investigated using 2-D TCAD …