The ideal single-photon source displaying high brightness and purity, emission on-demand,
mature integration, practical communication wavelength (ie, in the telecom range), and …

Silicon carbide (SiC) can be synthesized in a number of different structural forms known as
polytypes with a vast array of optically active point defects of interest for quantum information …

Virtually noiseless due to the scarcity of spinful nuclei in the lattice, simple oxides hold
promise as hosts of solid-state spin qubits. However, no suitable spin defect has yet been …

Silicon carbide (SiC) is a promising material for thermoelectric power generation. The
characterization of thermal transport properties is essential to understanding their …

B-centers in hexagonal boron nitride (hBN) are gaining significant research interest for
quantum photonics applications due to precise emitter positioning and highly reproducible …

Color centers in diamond are at the forefront of the second quantum revolution. A handful of
defects are in use, and finding ones with all the desired properties for quantum applications …

Single photon emitters in two-dimensional (2D) hexagonal boron nitride (hBN) are
promising solid-state quantum emitters for photonic applications and quantum networks …

Recent predictions suggest that oxides, such as MgO and CaO, could serve as hosts of spin
defects with long coherence times and thus be promising materials for quantum …

Pairs of silicon carbide nanowires were grown side by side synchronously from the same
metal catalyst nanoparticles. The stacking sequences of each pair were read by high …

Исследованы оптически активные вакансионные кремниевые дефекты (V Si),
обладающие электронным спином S= 3/2 в гетероструктуре карбида кремния 6H …