Morphological evolution and structural study of annealed amorphous-Ge films: Interplay between crystallization and dewetting

S Freddi, G Sfuncia, M Gherardi, G Nicotra… - Materials Science in …, 2024 - Elsevier
In this work, the dewetting process of an amorphous-Ge-based thin film (a-Ge) upon
annealing has been studied, highlighting the morphological and structural properties of the …

Diffusion-induced recrystallization during the early stages of solid-state dewetting of Ni-Pt bilayers

M Levi, A Bisht, E Rabkin - Acta Materialia, 2022 - Elsevier
We report the phenomenon of diffusion-induced recrystallization (DIR) in the Ni-Pt bilayers
deposited on sapphire substrate and annealed at the temperature of 950° C. The as …

A Level-set Method for Simulating Solid-State Dewetting in Systems with Strong Crystalline Anisotropy

AL Maxwell, CV Thompson, WC Carter - Acta Materialia, 2024 - Elsevier
Accurately modeling solid-state dewetting in materials with strong crystalline anisotropy is
an open problem in materials science with importance for both the manufacturing and …

Experimental and computational study of the orientation dependence of single-crystal Ruthenium nanowire stability

MA L'Etoile, B Wang, Q Cumston, AP Warren… - Nano Letters, 2022 - ACS Publications
Single-crystal nanowires are of broad interest for applications in nanotechnology. However,
such wires are subject to both the Rayleigh–Plateau instability and an ovulation process that …

Solid-state dewetting of Ag/Ni bi-layers: Accelerated void formation by the stress gradient in the bottom Ni layer

F Li, D Flock, D Wang, P Schaaf - Journal of Alloys and Compounds, 2023 - Elsevier
Solid-state dewetting (SSD) of the immiscible Ag/Ni bi-layers was studied. After annealing at
400° C for 1 min, the Ag film was dewetted on the Ni film, and this is the first observation …

Ion-beam-induced structure fragmentation and dewetting in Au/Ti films

CFS Codeço, SLA Mello, BF Magnani, MM Sant'Anna - Materialia, 2021 - Elsevier
We investigate the formation of Au structures by continuing fragmentation of a Au film
separated from Si (100) substrate by a Ti adhesion layer. The ion-beam processing uses 2 …