Intrinsic and extrinsic doping of ZnO and ZnO alloys
K Ellmer, A Bikowski - Journal of Physics D: Applied Physics, 2016 - iopscience.iop.org
In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special
emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the …
emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the …
First-principles predictions of Hall and drift mobilities in semiconductors
Carrier mobility is at the root of our understanding of electronic devices. We present a unified
methodology for the parameter-free calculations of phonon-limited drift and Hall carrier …
methodology for the parameter-free calculations of phonon-limited drift and Hall carrier …
[图书][B] GaAs and related materials: bulk semiconducting and superlattice properties
S Adachi - 1994 - World Scientific
The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
[图书][B] Analysis and simulation of heterostructure devices
V Palankovski, R Quay - 2004 - books.google.com
Communication and information systems are subject to rapid and highly so phisticated
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar …
A search for new back contacts for CdTe solar cells
There is widespread interest in reaching the practical efficiency of cadmium telluride (CdTe)
thin-film solar cells, which suffer from open-circuit voltage loss due to high surface …
thin-film solar cells, which suffer from open-circuit voltage loss due to high surface …
Advanced thermoelectrics governed by a single parabolic band: Mg 2 Si 0.3 Sn 0.7, a canonical example
The well-known single parabolic band (SPB) model has been useful in providing insights
into the understanding of transport properties of numerous thermoelectric materials …
into the understanding of transport properties of numerous thermoelectric materials …
[图书][B] The MOCVD Challenge: Volume 2: A Survey of GaInAsP-GaAs for photonic and electronic device applications
M Razeghi - 1995 - taylorfrancis.com
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …
Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically …
Enhancement of thermoelectric efficiency in Bi2Te3 via rare earth element doping
O Ivanov, M Yaprintsev, R Lyubushkin, O Soklakova - Scripta Materialia, 2018 - Elsevier
Abstract The Bi 2 Te 3, Bi 1.9 Lu 0.1 Te 3 and Bi 1.9 Tm 0.1 Te 3 thermoelectrics of n-type
conductivity were prepared by microwave-solvothermal method and spark plasma sintering …
conductivity were prepared by microwave-solvothermal method and spark plasma sintering …
The effect of the carrier drift velocity saturation in high-power semiconductor lasers at ultrahigh drive currents
OS Soboleva, VV Zolotarev, VS Golovin… - … on Electron Devices, 2020 - ieeexplore.ieee.org
Experimental light-current characteristics of high-power semiconductor lasers operating at
ultrahigh drive currents have been studied in terms of numerical models taking into account …
ultrahigh drive currents have been studied in terms of numerical models taking into account …
Bandgap grading and Al0. 3Ga0. 7As heterojunction emitter for highly efficient GaAs-based solar cells
ST Hwang, S Kim, H Cheun, H Lee, B Lee… - Solar Energy Materials …, 2016 - Elsevier
Abstract Both an Al 0.3 Ga 0.7 As heterojunction in the p-type emitter and a bandgap-graded
layer in the n-type light absorbing base were employed in the GaAs-based solar cells. The …
layer in the n-type light absorbing base were employed in the GaAs-based solar cells. The …