Two-plasmon spontaneous emission from a nonlocal epsilon-near-zero material
Plasmonic cavities can provide deep subwavelength light confinement, opening up new
avenues for enhancing the spontaneous emission process towards both classical and …
avenues for enhancing the spontaneous emission process towards both classical and …
Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs (111) substrate by molecular beam epitaxy
We report the growth of InSb/CdTe hetero-epitaxial thin films on the GaAs (111) B substrate
using molecular beam epitaxy. The use of (111) orientation enables the fast strain relaxation …
using molecular beam epitaxy. The use of (111) orientation enables the fast strain relaxation …
High electron mobility in metamorphic epitaxial InAs0. 7Sb0. 3 compound and its pin photodetector
Our study explores growth techniques and the electrical/optical behavior of InAs 0.7 Sb 0.3
compounds on GaAs substrates, utilizing various metamorphic buffer layers. The InAlSb …
compounds on GaAs substrates, utilizing various metamorphic buffer layers. The InAlSb …
Study on Epitaxial Growth of High‐Quality InSb Materials
J Zhang, L Yang, P Wang - Crystal Research and Technology, 2024 - Wiley Online Library
This paper discusses the optimization of the growth temperature and Sb/In ratio of 1 µm InSb
thin films grown on GaAs substrates by molecular beam epitaxy due to the InSb materials …
thin films grown on GaAs substrates by molecular beam epitaxy due to the InSb materials …
Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet
We report the growth mechanism and optical characteristics of type-II band-aligned GaSb
quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation …
quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation …
Ultrafast two-photon emission in a doped semiconductor thin film
As a high-order quantum transition, two-photon emission has an extremely low occurrence
rate compared to one-photon emission, thus having been considered a forbidden process …
rate compared to one-photon emission, thus having been considered a forbidden process …