A review of InP/InAlAs/InGaAs based transistors for high frequency applications
This paper presents an overview of the rapid progress being made in the development of
InP based devices for high speed applications. Over the past few decades, major aero …
InP based devices for high speed applications. Over the past few decades, major aero …
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications
The outstanding electron transport properties of InGaAs and InAs semiconductor materials,
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
makes them attractive candidates for future nano-scale CMOS. In this paper, the ON state …
Design and Analysis of InP/InAs/AlGaAs Based Cylindrical Surrounding Double-Gate (CSDG) MOSFETs With La2O3 for 5-nm Technology
P Paramasivam, N Gowthaman, VM Srivastava - IEEE Access, 2021 - ieeexplore.ieee.org
The structural improvement and rapid production of InP, InAs (III-V, binary), and AlGaAs (III-
V, ternary) compound semiconductor materials have invariably enabled its utilization in …
V, ternary) compound semiconductor materials have invariably enabled its utilization in …
Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping
We report on the monolithic integration of GaSb and InAs fins on on-axis 300 mm Si (001) by
metal-organic chemical vapor deposition. The thickness of the GaAs/Si (001) fins used as a …
metal-organic chemical vapor deposition. The thickness of the GaAs/Si (001) fins used as a …
Electrical characterization and modeling of gate-last vertical InAs nanowire MOSFETs on Si
M Berg, OP Kilpi, KM Persson… - IEEE Electron …, 2016 - ieeexplore.ieee.org
Vertical InAs nanowire transistors are fabricated on Si using a gate-last method, allowing for
lithography-based control of the vertical gate length. The best devices combine good ON …
lithography-based control of the vertical gate length. The best devices combine good ON …
High-performance lateral nanowire InGaAs MOSFETs with improved on-current
We report on In 0.85 Ga 0.15 As MOSFETs utilizing selectively grown lateral nanowires as
the channel. These devices exhibit ON-current of ION= 565 μA/μm at IOFF= 100 nA/μm and …
the channel. These devices exhibit ON-current of ION= 565 μA/μm at IOFF= 100 nA/μm and …
Quantized Conduction and High Mobility in Selectively Grown InxGa1–xAs Nanowires
We report measured quantized conductance and quasi-ballistic transport in selectively
regrown In0. 85Ga0. 15As nanowires. Very low parasitic resistances obtained by regrowth …
regrown In0. 85Ga0. 15As nanowires. Very low parasitic resistances obtained by regrowth …
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
QH Luc, KS Yang, JW Lin, CC Chang… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter presents a remote NH 3/N 2 plasma treatment after gate oxide deposition for
improving the electrical characteristics and the reliability of In 0.53 Ga 0.47 As FinFET. The …
improving the electrical characteristics and the reliability of In 0.53 Ga 0.47 As FinFET. The …
Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current
In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …
High-frequency quantum well InGaAs-on-Si MOSFETs with scaled gate lengths
High-frequency InGaAs-On-Si MOSFETs with gate lengths down to 14 nm and a Si CMOS
compatible fabrication flow are demonstrated. Record high combined ft and f max of 370 and …
compatible fabrication flow are demonstrated. Record high combined ft and f max of 370 and …