Chalcogenide compounds are the main characters in a revolution in electronic memories.
These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good …

Abstract The structure of Ge2Sb2Te5 thin films doped with Bi has been studied using TEM,
Raman spectroscopy, and Optical Transmission Spectroscopy. Thin films were obtained by …

In this study IV characteristic, temperature dependence of resistivity, thermopower, switching
and memory effect were investigated for GST225 thin films. Resistivities, ratio of the …

Structural and thermokinetic analyses were used to study the crystallization behavior of Ge 8
Sb (2-x) Bi x Te 11 thin films, promising materials for phase-change memory recording …

The transport properties of the phase-change material Ge 2 Sb 2 Te 5 can be tuned by
controlling its atomic structure and concentration of charge carriers. Moving away from the …

Amorphous chalcogenide semiconductors have advantageous optical and electrochemical
properties, but the influence of the thermal treatment temperature on these properties is not …

Исследованы температурные зависимости удельного сопротивления и вольт-
амперных характеристик тонких пленок материалов фазовой памяти на основе …

The temperature dependences of the resistivity and current–voltage (I–V) characteristics of
phase change memory thin films based on quasi-binary-line GeTe–Sb 2 Te 3 chalcogenide …

In this work, we studied temperature dependences of the resistivity and current-voltage
characteristics of amorphous thin films based on the materials of a Ge–Sb–Te system of …

The influence of Ti doping on the resistivity, activation energy of conductivity, energy band
gap, Urbach energy, crystallization temperature, heat effect and crystallization kinetic …