We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition
on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality …

We demonstrate that a lightly strained germanium channel (⁠ ε//=− 0.41%⁠) in an undoped
Ge/Si 0.1 Ge 0.9 heterostructure field effect transistor supports a two-dimensional (2D) hole …

The Ge-Ge longitudinal optical Raman peak has been measured in strained Ge 1− x Sn x
alloy layers grown on top of relaxed In y Ga 1− y As buffer layers on GaAs substrates by …

A procedure for the quantitative measurement of composition and strain in epitaxial Si1-
xGex/Si heterostructures by means of Raman spectroscopy for any Ge concentration is …

We have used Raman spectroscopy, transmission electron microscopy, x-ray diffraction, and
x-ray photoemission spectroscopy to investigate strain relaxation mechanism of Si 0.22 Ge …

Silicon, germanium and their alloys are classical semiconductors that play an important role
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …

Previous Raman spectroscopy studies on SiGe alloys have left rather large uncertainties
concerning the relationships between the Raman peaks׳ frequency shifts and stress. In this …

We investigate the temperature dependence of the Ge Raman mode strain–phonon
coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature‐dependent …

We report an extensive study of strained Ge/Si 0.2 Ge 0.8 multiquantum wells grown by
ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples …

An analytical model is introduced to compute the Raman spectrum of Si‐Ge core shell
nanowires. For the calculation of the strain, the materials are assumed to be elastically …