2D materials-based nanoscale tunneling field effect transistors: current developments and future prospects
The continuously intensifying demand for high-performance and miniaturized semiconductor
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
devices has pushed the aggressive downscaling of field-effect transistors (FETs) design …
Recent developments in black phosphorous transistors: a review
A Pon, A Bhattacharyya, R Rathinam - Journal of Electronic Materials, 2021 - Springer
Abstract Two-dimensional (2D) materials like graphene, phosphorene, germanene, silicene,
and transition metal dichalcogenides have attracted intense research attention because of …
and transition metal dichalcogenides have attracted intense research attention because of …
[PDF][PDF] Suppression of Ambipolar current and analysis of RF performance in double gate tunneling field effect transistors for low-power applications
N Guenifi, SB Rahi, M Larbi - Int J nanoparticles nanotech, 2020 - pdfs.semanticscholar.org
The present research letter is dedicated to a detailed analysis of a double-gate tunnel field-
effect transistor (DG-TFET). The DG-TFET provides improved on-current (ION) than a …
effect transistor (DG-TFET). The DG-TFET provides improved on-current (ION) than a …
Robust nanocapacitors based on wafer-scale single-crystal hexagonal boron nitride monolayer films
Two-dimensional wafer-scale and single-crystal hexagonal boron nitride (h-BN) films are
considered a crucial part of the next generation of van der Waals (vdW) electronic devices …
considered a crucial part of the next generation of van der Waals (vdW) electronic devices …
Heterojunction tunnel field effect transistors–a detailed review
JE Jeyanthi, TS ArunSamuel - 2020 5th International …, 2020 - ieeexplore.ieee.org
Tunnel FET (TFET) can provide ultra-low quiescent (~ pA) current. Some of the essential
parameters for determining the characteristics of TFET are high I ON current, constrained …
parameters for determining the characteristics of TFET are high I ON current, constrained …
Ambipolar transport in van der Waals black arsenic field effect transistors
Black arsenic (BAs) is an elemental van der Waals semiconductor that is promising for a
wide range of electronic and photonic applications. The narrow bandgap and symmetric …
wide range of electronic and photonic applications. The narrow bandgap and symmetric …
Heterojunction Tunnel Field-Effect Transistors
P Paletti, A Seabaugh - Springer Handbook of Semiconductor Devices, 2022 - Springer
The tunnel field-effect transistor (TFET) relies on interband tunneling to achieve
subthreshold swing below the 60 mV/dec fundamental limit at room temperature of bipolar …
subthreshold swing below the 60 mV/dec fundamental limit at room temperature of bipolar …
[图书][B] Molecular Beam Epitaxy Growth of Monolayer Hexagonal Boron Nitride Films for Metal-Insulator-Metal Devices
Y He - 2021 - search.proquest.com
Abstract Two-dimensional (2D) hexagonal boron nitride (h-BN) plays a significant role in
nanoscale electrical and optical devices because of its superior properties. However, the …
nanoscale electrical and optical devices because of its superior properties. However, the …
Next Generation Electronics Based on Anisotropic 2D Materials
B Wang, J Xue - 2022 - books.rsc.org
All 2D materials are intrinsically anisotropic, since within each layer the atoms are
connected with covalent bonds while between the layers the atoms interact by much weaker …
connected with covalent bonds while between the layers the atoms interact by much weaker …
Highly Enhanced Many-body Interactions in Anisotropic 2D Semiconductors
A Sharma, Y Lu - 2022 - books.rsc.org
The exfoliation of a single layer of carbon atom graphene in 20041 opened up a new class
of materials2, 3 that have a fundamentally different band gap structure and different light …
of materials2, 3 that have a fundamentally different band gap structure and different light …