In this letter, we investigate the impact of potassium hydroxide (KOH) etching procedure on
Silicon nanostructure fabricated by Atomic force microscopy on P-type Silicon-on-insulator …

In this letter, we investigate the fabrication of Silicon nanostructure patterned on lightly
doped (1015 cm− 3) p-type silicon-on-insulator by atomic force microscope nanolithography …

Purpose The purpose of this paper is to analyse the operation of p-type side gate
junctionless silicon transistor (SGJLT) in accumulation region through experimental …

Double gate junctionless (DGJLT) transistor, as a pinch off device, was previously
fabricated. In this letter, the impact of channel width variation on behaviour of the device is …

Atomic force microscopy nanolithography (AFM) is a strong fabrication method for micro and
nano structure due to its high spatial resolution and positioning abilities. Mixing AFM …

FABRICATION AND SIMULATION OF LITHOGRAPHICALLY DEFINED JUNCTIONLESS
LATERAL GATE SILICON NANOWIRE TRANSISTORS By FARHAD LARKI Th Page 1 …

FABRICATION AND SIMULATION OF P-TYPE JUNCTIONLESS SILICON NANO-WIRE
TRANSISTOR ON SILICON ON INSULATOR BY AFM NANO LITHOGRAPHY B Page 1 …