In the present-day scenario of low-power electronics, there is a steady and increasing need
for an adequate device that can counteract the power dissipation issue due to the consistent …

We investigated the electron transport properties of cobalt sulphide Schottky diodes with Au
and Ag metal contacts. Pure CoS 2 nanoplates were synthesized using solid state reaction …

In the 21st century, the lifestyle of every individual is dependent on various electronic
gadgets such as laptops, cameras, mobiles, smart watches, etc. All devices directly or …

The continuous downscaling of Si MOS transistors facilitated technology to follow Moor's
Law which states that transistor density doubles every 18 months. However, the fundamental …

Wireless networks are using an increasing amount of energy to assure the quality of service
as the number of high-data-rate applications increases. As a result of inadequate energy …

Aggressive down-scaling of conventional MOS transistors has led to an impending power
crisis in which static power consumption is becoming too high. However, advanced MOSFET …

It is remarked that the increasing power dissipation issue can be addressed by the evolution
of low power devices. The solutions that have been found in terms of negative capacitance …

So far, there has been a continuous and steady growth of the market for mobile computing
devices, wireless systems, and biomedical implantable devices [1–5]. This has led to a …

Gate-all-around Tunnel Field Effect Transistors (GAA-TFETs) have been designed with the
objective to reduce leakage current and to maintain high Ion/Ioff ratio. In this chapter, the …

In this chapter, the DC and RF/analog performances of Gate-all-around Tunnel Field Effect
Transistors (GAA-TFETs) are thoroughly investigated where a Dielectric Pocket (DP) is …