The current burst in research activities on disordered semiconductors calls for the
development of appropriate theoretical tools that reveal the features of electron states in …

The space-and temperature-dependent electron distribution n (r, T) is essential for the
theoretical description of the optoelectronic properties of disordered semiconductors. We …

During the past decades, group-III nitrides have emerged as a new impetus for the
development of semiconductor industry and attracted significant attentions in different fields …

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN
single quantum wells (SQWs) in the efficiency droop regime using high injection time …

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes
having identical dislocation density and epitaxial structure, but different indium content in the …

Site-and polarity-controlled core–shell InGaN/GaN nanorod LED structures were grown by
metal organic vapor phase epitaxy on Si (111). Scanning transmission electron microscope …

The spectroscopic analysis and two-dimensional confocal photoluminescence (PL)
properties of GaN films grown on silicon (Si) and sapphire (Al2O3) substrates were …

Abstract (DE) In dieser Dissertation werden verschiedene Methoden zur Simulation der
Dynamik der optischen Moden einer Fabry-Pérot-Laserdiode diskutiert. Experimentell lässt …