A variation-aware design for storage cells using Schottky-barrier-type GNRFETs
E Abbasian, M Gholipour - Journal of Computational Electronics, 2020 - Springer
Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome
short-channel effects in nanoscale devices. However, with continuous technology scaling …
short-channel effects in nanoscale devices. However, with continuous technology scaling …
Design and implementation of CNFET SRAM cells by using multi-threshold technique
This paper presents a CNFET (Carbon Nano-tube FET) based MT (Multi-Threshold)-SRAM
(Static Random Access Memory) design based on the leakage reduction mechanism. A …
(Static Random Access Memory) design based on the leakage reduction mechanism. A …
A novel charge recycle read write assist technique for energy efficient and fast 20 nm 8T-SRAM array
The read instability of conventional 6T-SRAM cell has made the 8T-SRAM cell a substitute
for high data reliability. But the single ended nature of read operation demands a complete V …
for high data reliability. But the single ended nature of read operation demands a complete V …
Performance evaluation of double gate tunnel FET based chain of inverters and 6-T SRAM cell
D Kumar - Engineering Research Express, 2019 - iopscience.iop.org
In this work, a Lookup table based verilog-A model is employed in cadence to evaluate the
performance of the chain of inverters and 6-T SRAM cell based on double gate Tunnel-field …
performance of the chain of inverters and 6-T SRAM cell based on double gate Tunnel-field …
An improved energy efficient SRAM cell for access over a wide frequency range
D Nayak, DP Acharya, K Mahapatra - Solid-state electronics, 2016 - Elsevier
Leakage current contribution to the power consumption cannot be ignored in the sub-100
nm technology. Drastic reduction of channel length of the modern highly scaled device …
nm technology. Drastic reduction of channel length of the modern highly scaled device …
A novel indirect read technique based SRAM with ability to charge recycle and differential read for low power consumption, high stability and performance
Read noise insertion problem of conventional read method of 6T-SRAM cell has forced to
think about indirect read. Indirect read though eliminates read noise insertion but also take …
think about indirect read. Indirect read though eliminates read noise insertion but also take …
Stability analysis of SRAM cell using CNT and GNR field effect transistors
In modern technologies, read stability and write ability have become major concerns in nano
regime for static random access memory (SRAM) cell. This paper provides the stability …
regime for static random access memory (SRAM) cell. This paper provides the stability …
Design and implementaton of SRAM macro unit
SN Panda, S Padhi, V Phanindra… - … on Trends in …, 2017 - ieeexplore.ieee.org
The topic SRAM Macro basically explains the memory unit associated with any processor.
Here Macro signifies that the explanation will not only contain the memory unit but also …
Here Macro signifies that the explanation will not only contain the memory unit but also …
Power efficient design of a novel SRAM cell with higher write ability
D Nayak, DP Acharya… - 2015 Annual IEEE India …, 2015 - ieeexplore.ieee.org
The modern high-performance portable communication devices are the key to make the
world more inclusive than before. There is a great demand for high-performance SOC inside …
world more inclusive than before. There is a great demand for high-performance SOC inside …
Design of low power stacked inverter based sram cell with improved write ability
D Chaudhary, V Muppalla… - 2020 IEEE Region 10 …, 2020 - ieeexplore.ieee.org
This paper puts forth double ended low power static random access memory (SRAM) cell
structure that uses low power stacked inverters to reduce the power dissipation. The power …
structure that uses low power stacked inverters to reduce the power dissipation. The power …