CMOS‐Compatible Tellurium/Silicon Ultra‐Fast Near‐Infrared Photodetector
High‐quality photodetectors are always the main way to obtain external information,
especially near‐infrared sensors play an important role in remote sensing communication …
especially near‐infrared sensors play an important role in remote sensing communication …
Reactive flow in silicon electrodes assisted by the insertion of lithium
In the search for high-energy density materials for Li-ion batteries, silicon has emerged as a
promising candidate for anodes due to its ability to absorb a large number of Li atoms …
promising candidate for anodes due to its ability to absorb a large number of Li atoms …
Hydrothermally grown SnS2/Si nanowire core-shell heterostructure photodetector with excellent optoelectronic performances
Core-shell nanowire heterostructure is a new architecture for photodetector application with
enlarged active surface area enhancing light absorption and photodetector performance. As …
enlarged active surface area enhancing light absorption and photodetector performance. As …
Electrowetting-on-dielectric characteristics of ZnO nanorods
Herein, we report the electrowetting-on-dielectric (EWOD) characteristics of ZnO nanorods
(NRs) prepared via the hydrothermal method with different initial Zn2+ concentrations (0.03 …
(NRs) prepared via the hydrothermal method with different initial Zn2+ concentrations (0.03 …
Density Functional Investigation of [001] and [111] SiNWs and the Effect of Doping with Boron and Phosphorus
NAM Al-Nuaimi, F Hilser, S Gemming - Crystals, 2024 - mdpi.com
In the present study, we investigate the influence of boron (B) and phosphorus (P)(p-and n-
type, respectively) doping on the electronic properties of ultra-thin silicon nanowires (SiNWs) …
type, respectively) doping on the electronic properties of ultra-thin silicon nanowires (SiNWs) …
First-principles approaches to simulate lithiation in silicon electrodes
Silicon is viewed as an excellent electrode material for lithium batteries due to its high
lithium storage capacity. Various Si nanostructures, such as Si nanowires, have performed …
lithium storage capacity. Various Si nanostructures, such as Si nanowires, have performed …
Towards ordered silicon nanostructures through self‐assembling mechanisms and processes
RA Puglisi - Journal of nanomaterials, 2015 - Wiley Online Library
The design and development of innovative architectures for memory storage and energy
conversion devices are at the forefront of current research efforts driving us towards a …
conversion devices are at the forefront of current research efforts driving us towards a …
A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications
Recently, ultralarge (> 10%) strain with fully reversible elastic deformation has been
experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)] …
experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)] …
Grain boundary engineering for improved thin silicon photovoltaics
R Raghunathan, E Johlin, JC Grossman - Nano Letters, 2014 - ACS Publications
In photovoltaic devices, the bulk disorder introduced by grain boundaries (GBs) in
polycrystalline silicon is generally considered to be detrimental to the physical stability and …
polycrystalline silicon is generally considered to be detrimental to the physical stability and …
Silicon and germanium adamantane and diamantane monolayers as two-dimensional anisotropic direct-gap semiconductors
G Santos-Castro, T Pandey, CHV Bruno, EWS Caetano… - Physical Review B, 2023 - APS
Structural and electronic properties of silicon and germanium monolayers with two different
diamondoid crystal structures are detailed ab initio. Our results show that, despite Si and Ge …
diamondoid crystal structures are detailed ab initio. Our results show that, despite Si and Ge …