CMOS‐Compatible Tellurium/Silicon Ultra‐Fast Near‐Infrared Photodetector

L Li, H Xu, Z Li, L Liu, Z Lou, L Wang - Small, 2023 - Wiley Online Library
High‐quality photodetectors are always the main way to obtain external information,
especially near‐infrared sensors play an important role in remote sensing communication …

Reactive flow in silicon electrodes assisted by the insertion of lithium

K Zhao, GA Tritsaris, M Pharr, WL Wang, O Okeke… - Nano …, 2012 - ACS Publications
In the search for high-energy density materials for Li-ion batteries, silicon has emerged as a
promising candidate for anodes due to its ability to absorb a large number of Li atoms …

Hydrothermally grown SnS2/Si nanowire core-shell heterostructure photodetector with excellent optoelectronic performances

S Das, S Pal, K Larsson, D Mandal, S Giri… - Applied Surface …, 2023 - Elsevier
Core-shell nanowire heterostructure is a new architecture for photodetector application with
enlarged active surface area enhancing light absorption and photodetector performance. As …

Electrowetting-on-dielectric characteristics of ZnO nanorods

JH Kim, JH Lee, A Mirzaei, HW Kim, BT Tan, P Wu… - Scientific reports, 2020 - nature.com
Herein, we report the electrowetting-on-dielectric (EWOD) characteristics of ZnO nanorods
(NRs) prepared via the hydrothermal method with different initial Zn2+ concentrations (0.03 …

Density Functional Investigation of [001] and [111] SiNWs and the Effect of Doping with Boron and Phosphorus

NAM Al-Nuaimi, F Hilser, S Gemming - Crystals, 2024 - mdpi.com
In the present study, we investigate the influence of boron (B) and phosphorus (P)(p-and n-
type, respectively) doping on the electronic properties of ultra-thin silicon nanowires (SiNWs) …

First-principles approaches to simulate lithiation in silicon electrodes

Q Zhang, Y Cui, E Wang - Modelling and Simulation in Materials …, 2013 - iopscience.iop.org
Silicon is viewed as an excellent electrode material for lithium batteries due to its high
lithium storage capacity. Various Si nanostructures, such as Si nanowires, have performed …

Towards ordered silicon nanostructures through self‐assembling mechanisms and processes

RA Puglisi - Journal of nanomaterials, 2015 - Wiley Online Library
The design and development of innovative architectures for memory storage and energy
conversion devices are at the forefront of current research efforts driving us towards a …

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

S Li, JP Chou, H Zhang, Y Lu, A Hu - Journal of Applied Physics, 2019 - pubs.aip.org
Recently, ultralarge (> 10%) strain with fully reversible elastic deformation has been
experimentally achieved in silicon nanowires [H. Zhang et al., Sci. Adv. 2, e1501382 (2016)] …

Grain boundary engineering for improved thin silicon photovoltaics

R Raghunathan, E Johlin, JC Grossman - Nano Letters, 2014 - ACS Publications
In photovoltaic devices, the bulk disorder introduced by grain boundaries (GBs) in
polycrystalline silicon is generally considered to be detrimental to the physical stability and …

Silicon and germanium adamantane and diamantane monolayers as two-dimensional anisotropic direct-gap semiconductors

G Santos-Castro, T Pandey, CHV Bruno, EWS Caetano… - Physical Review B, 2023 - APS
Structural and electronic properties of silicon and germanium monolayers with two different
diamondoid crystal structures are detailed ab initio. Our results show that, despite Si and Ge …