Numerical model of carbon chemical vapor deposition at internal surfaces
H Barua, A Povitsky - Vacuum, 2020 - Elsevier
The objective of this study is to obtain the rate of Carbon deposition by low pressure
chemical vapor deposition process (LPCVD) at internal surfaces to verify that large aspect …
chemical vapor deposition process (LPCVD) at internal surfaces to verify that large aspect …
Three-dimensional simulation of DRIE process based on the narrow band level set and monte carlo method
JC Yu, ZF Zhou, JL Su, CF Xia, XW Zhang, ZZ Wu… - Micromachines, 2018 - mdpi.com
A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed
based on the narrow band level set method for surface evolution and Monte Carlo method …
based on the narrow band level set method for surface evolution and Monte Carlo method …
Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method
Y Jia-Cheng, ZF Zhou, S Jia-Le, X Chang-Feng… - …, 2018 - search.proquest.com
A three-dimensional topography simulation of deep reactive ion etching (DRIE) is developed
based on the narrow band level set method for surface evolution and Monte Carlo method …
based on the narrow band level set method for surface evolution and Monte Carlo method …
Computational Modeling of Chemical Vapor Deposition
H Barua - 2016 - rave.ohiolink.edu
The primary objective of this study is to obtain the rate of Carbon deposition by chemical
vapor deposition (CVD) process for material samples hanged in CVD reactor. The samples …
vapor deposition (CVD) process for material samples hanged in CVD reactor. The samples …