Metal Halide Perovskites for Direct X‐Ray Detection in Medical Imaging: To Higher Performance

J Fan, W Li, Q Zhou, G Yang, P Tang… - Advanced Functional …, 2024 - Wiley Online Library
This review discusses the utilization of metal halide perovskite (MHP) materials in X‐ray
direct imaging detectors for medical application. Compared to traditional semiconductors …

A wideband CMOS low noise amplifier employing noise and IM2 distortion cancellation for a digital TV tuner

D Im, I Nam, HT Kim, K Lee - IEEE Journal of Solid-State …, 2009 - ieeexplore.ieee.org
A wideband CMOS low noise amplifier (LNA) with single-ended input and output employing
noise and IM2 distortion cancellation for a digital terrestrial and cable TV tuner is presented …

MOSFET modeling for RF IC design

Y Cheng, MJ Deen, CH Chen - IEEE Transactions on Electron …, 2005 - ieeexplore.ieee.org
High-frequency (HF) modeling of MOSFETs for radio-frequency (RF) integrated circuit (IC)
design is discussed. Modeling of the intrinsic device and the extrinsic components is …

MOSFET optimization in deep submicron technology for charge amplifiers

G De Geronimo, P O'Connor - IEEE Symposium Conference …, 2004 - ieeexplore.ieee.org
The optimization of the input MOSFET for charge amplifiers in deep submicron technologies
is discussed. After a review of the traditional approach, the impact of properly modeling the …

Compact noise models for MOSFETs

RP Jindal - IEEE Transactions on Electron Devices, 2006 - ieeexplore.ieee.org
A physical understanding of both intrinsic and extrinsic noise mechanisms in a MOSFET is
developed. Intrinsic noise mechanisms fundamental to device operation include channel …

The impact of semiconductor technology scaling on CMOS RF and digital circuits for wireless application

K Lee, I Nam, I Kwon, J Gil, K Han… - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
The impact of CMOS technology scaling on the various radio frequency (RF) circuit
components such as active, passive and digital circuits is presented. Firstly, the impact of …

A 40-Gb/s Transimpedance Amplifier in 0.18-m CMOS Technology

JD Jin, SSH Hsu - IEEE Journal of Solid-State Circuits, 2008 - ieeexplore.ieee.org
A 40-Gb/s transimpedance amplifier (TIA) is realized in 0.18-μm CMOS technology. From the
measured S-parameters, a transimpedance gain of 51 dBΩ and a 3-dB bandwidth up to 30.5 …

High-frequency noise of modern MOSFETs: Compact modeling and measurement issues

MJ Deen, CH Chen, S Asgaran… - … on Electron Devices, 2006 - ieeexplore.ieee.org
Compact modeling of the most important high-frequency (HF) noise sources of the MOSFET
is presented in this paper, along with challenges in noise measurement and deembedding …

Complete high-frequency thermal noise modeling of short-channel MOSFETs and design of 5.2-GHz low noise amplifier

K Han, J Gil, SS Song, J Han, H Shin… - IEEE Journal of Solid …, 2005 - ieeexplore.ieee.org
Taking a velocity saturation effect and a carrier heating effect in the gradual channel region,
complete thermal noise modeling of short-channel MOSFETs including the induced gate …

Compact modeling of thermal noise in the MOS transistor

AS Roy, CC Enz - IEEE transactions on electron devices, 2005 - ieeexplore.ieee.org
Although some of the recently proposed compact models for thermal noise in MOS
transistors exhibit a good match with experimental data, we believe most of the existing …